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AkademIndex

Xizmatlar

S. V. Ivanov

7 ta ish

Fizika-Texnika Instituti

AkademScholarda batafsil koʻrsatkichlar

  1. Ground state exciton lasing in CdSe submonolayers inserted in a ZnSe matrix

    N. N. Ledentsov, I. L. Krestnikov, M. V. Maximov +6

    Maqola19964 iqtibos
    ABI

  2. Composition, stoichiometry and growth rate control in molecular beam epitaxy of ZnSe based ternary and quaternary alloys

    S. V. Ivanov, S. V. Sorokin, P. S. Kop’ev +3

    Maqola19962 iqtibos
    ABI

  3. Enhanced room-temperature 3.5 µm photoluminescence in stress-balanced metamorphic In(Sb,As)/In(Ga,Al)As/GaAs quantum wells

    M. Yu. Chernov, Victor A. Solov’ev, O. S. Komkov +6

    Maqola20172 iqtibos
    ABI

  4. Metamorphic InAs(Sb)/InGaAs/InAlAs nanoheterostructures grown on GaAs for efficient mid-IR emitters

    S. V. Ivanov, M. Yu. Chernov, В. А. Соловьев +3

    Maqola20182 iqtibos
    ABI

  5. Growth of cubic GaN by molecular-beam epitaxy on porous GaAs substrates

    V. V. Mamutin, V. P. Ulin, V. V. Tret’yakov +3

    MaqolaGaN-based semiconductor devices and materialsTechnical Physics Letters19991 iqtibos
    ABI

  6. Growth of GaN by molecular-beam epitaxy with activation of the nitrogen by a capacitive rf magnetron discharge

    V. V. Mamutin, В. Н. Жмерик, T. V. Shubina +5

    MaqolaGaN-based semiconductor devices and materialsTechnical Physics Letters19980 iqtibos
    ABI

  7. Features of the Formation of Ohmic Contacts to n+-InN

    Pavlo Sai, N. V. Safryuk-Romanenko, Dmytro B. But +6

    MaqolaOchiq kirishGaN-based semiconductor devices and materialsUkrainian Journal of Physics20190 iqtibos
    ABI