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AkademIndex

Xizmatlar

A. Yu. Egorov

13 ta ish

Fizika-Texnika Instituti

AkademScholarda batafsil koʻrsatkichlar

  1. GaN nanowire ultraviolet photodetector with a graphene transparent contact

    A. V. Babichev, H. Zhang, Pierre Lavenus +5

    Maqola201311 iqtibos
    ABI

  2. MBE growth of GaP on a Si substrate

    M. S. Sobolev, А. А. Лазаренко, E. V. Nikitina +3

    Maqola20155 iqtibos
    ABI

  3. Ordered arrays of quantum dots: Formation, electronic spectra, relaxation phenomena, lasing

    N. N. Ledentsov, Marius Grundmann, N. Kirstaedter +16

    Maqola19963 iqtibos
    ABI

  4. Direct formation of vertically coupled quantum dots in Stranski-Krastanow growth

    N. N. Ledentsov, V. A. Shchukin, Marius Grundmann +17

    Maqola19962 iqtibos
    ABI

  5. Study of defects in heterostructures with GaPAsN and GaPN quantum wells in the GaP matrix

    Oleg I. Rumyantsev, P. N. Brunkov, E. V. Pirogov +1

    Maqola20102 iqtibos
    ABI

  6. Resonant spin-flip Raman scattering and localized exciton luminescence in submonolayer InAs-GaAs structures

    A. A. Sirenko, T. Ruf, N. N. Ledentsov +4

    Maqola19962 iqtibos
    ABI

  7. Quantum-dot cw heterojunction injection laser operating at room temperature with an output power of 1 W

    Yu. M. Shernyakov, A. Yu. Egorov, A. E. Zhukov +12

    MaqolaSemiconductor Quantum Structures and DevicesTechnical Physics Letters19970 iqtibos
    ABI

  8. Low-threshold quantum-dot injection heterolaser emitting at 1.84 μm

    V. M. Ustinov, A. R. Kovsh, A. E. Zhukov +9

    MaqolaSemiconductor Quantum Structures and DevicesTechnical Physics Letters19980 iqtibos
    ABI

  9. Operating characteristics and their anisotropy in a high-power laser (1.5 W, 300 K) with a quantum-dot active region

    Yu. M. Shernyakov, A. Yu. Egorov, B. V. Volovik +11

    MaqolaSemiconductor Quantum Structures and DevicesTechnical Physics Letters19980 iqtibos
    ABI

  10. GaAsN/GaAs and InGaAsN/GaAs heterostructures grown by molecular beam epitaxy

    A. Yu. Egorov, A. E. Zhukov, A. R. Kovsh +7

    MaqolaSemiconductor Quantum Structures and DevicesTechnical Physics Letters19980 iqtibos
    ABI

  11. Lasing in submonolayer InAs/AlGaAs structures without external optical confinement

    B. V. Volovik, A. F. Tsatsul’nikov, N. N. Ledentsov +11

    MaqolaSemiconductor Quantum Structures and DevicesTechnical Physics Letters19980 iqtibos
    ABI

  12. Spontaneous long-wavelength interlevel emission in quantum-dot laser structures

    L. E. Vorob’ev, D. A. Firsov, V. A. Shalygin +11

    MaqolaSemiconductor Quantum Structures and DevicesTechnical Physics Letters19980 iqtibos
    ABI

  13. Spontaneous Interlevel Emission from Quantum Dot and Quantum Well Laser Structures

    L. E. Vorobjev, D. A. Firsov, V. A. Shalygin +11

    MaqolaOchiq kirishLaser-Matter Interactions and ApplicationsMaterials science forum19980 iqtibos
    ABI