Maqola

Resonant spin-flip Raman scattering and localized exciton luminescence in submonolayer InAs-GaAs structures

A. A. SirenkoMax‐Planck‐Institut für Festkörperforschung, Heisenbergstrasse 1, D‐70569 Stuttgart (Germany)T. RufMax-Planck Institut für Festkörperforschung, Heisenbergstrasse 1, D-70569 Stuttgart, GermanyN. N. LedentsovA.F. Ioffe Physical Technical Institute, Russian Academy of Sciences, Politekhnicheskaya 26, 194021 St. Petersburg, RussiaA. Yu. EgorovA.F. Ioffe Physical Technical Institute, Russian Academy of Sciences, Politekhnicheskaya 26, 194021 St. Petersburg, RussiaP. S. Kop’evA.F. Ioffe Physical Technical Institute, Russian Academy of Sciences, Politekhnicheskaya 26, 194021 St. Petersburg, RussiaV. M. UstinovA.F. Ioffe Physical Technical Institute, Russian Academy of Sciences, Politekhnicheskaya 26, 194021 St. Petersburg, RussiaA. E. ZhukovA.F. Ioffe Physical Technical Institute, Russian Academy of Sciences, Politekhnicheskaya 26, 194021 St. Petersburg, Russia

1996en

ABI

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Annotatsiya mavjud emas.

Identifikatorlar

DOI: 10.1016/0038-1098(95)00624-9

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