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Xizmatlar

V. M. Ustinov

14 ta ish

Russian Academy of Sciences

AkademScholarda batafsil koʻrsatkichlar

  1. Quantum dot heterostructures: Fabrication, properties, lasers (Review)

    N. N. Ledentsov, V. M. Ustinov, V. A. Shchukin +3

    Maqola19988 iqtibos
    ABI

  2. Energy levels and exciton oscillator strength in submonolayer InAs-GaAs heterostructures

    M. V. Belousov, N. N. Ledentsov, M. V. Maximov +7

    Maqola19953 iqtibos
    ABI

  3. Ordered arrays of quantum dots: Formation, electronic spectra, relaxation phenomena, lasing

    N. N. Ledentsov, Marius Grundmann, N. Kirstaedter +16

    Maqola19963 iqtibos
    ABI

  4. Direct formation of vertically coupled quantum dots in Stranski-Krastanow growth

    N. N. Ledentsov, V. A. Shchukin, Marius Grundmann +17

    Maqola19962 iqtibos
    ABI

  5. Magneto-optical properties in ultrathin InAs-GaAs quantum wells

    P. D. Wang, N. N. Ledentsov, C. M. Sotomayor Torres +5

    Maqola19942 iqtibos
    ABI

  6. Resonant spin-flip Raman scattering and localized exciton luminescence in submonolayer InAs-GaAs structures

    A. A. Sirenko, T. Ruf, N. N. Ledentsov +4

    Maqola19962 iqtibos
    ABI

  7. Optical characterization of submonolayer and monolayer InAs structures grown in a GaAs matrix on (100) and high-index surfaces

    P. D. Wang, N. N. Ledentsov, C. M. Sotomayor Torres +2

    Maqola19942 iqtibos
    ABI

  8. Quantum-dot cw heterojunction injection laser operating at room temperature with an output power of 1 W

    Yu. M. Shernyakov, A. Yu. Egorov, A. E. Zhukov +12

    MaqolaSemiconductor Quantum Structures and DevicesTechnical Physics Letters19970 iqtibos
    ABI

  9. Low-threshold quantum-dot injection heterolaser emitting at 1.84 μm

    V. M. Ustinov, A. R. Kovsh, A. E. Zhukov +9

    MaqolaSemiconductor Quantum Structures and DevicesTechnical Physics Letters19980 iqtibos
    ABI

  10. Operating characteristics and their anisotropy in a high-power laser (1.5 W, 300 K) with a quantum-dot active region

    Yu. M. Shernyakov, A. Yu. Egorov, B. V. Volovik +11

    MaqolaSemiconductor Quantum Structures and DevicesTechnical Physics Letters19980 iqtibos
    ABI

  11. GaAsN/GaAs and InGaAsN/GaAs heterostructures grown by molecular beam epitaxy

    A. Yu. Egorov, A. E. Zhukov, A. R. Kovsh +7

    MaqolaSemiconductor Quantum Structures and DevicesTechnical Physics Letters19980 iqtibos
    ABI

  12. Lasing in submonolayer InAs/AlGaAs structures without external optical confinement

    B. V. Volovik, A. F. Tsatsul’nikov, N. N. Ledentsov +11

    MaqolaSemiconductor Quantum Structures and DevicesTechnical Physics Letters19980 iqtibos
    ABI

  13. Spontaneous long-wavelength interlevel emission in quantum-dot laser structures

    L. E. Vorob’ev, D. A. Firsov, V. A. Shalygin +11

    MaqolaSemiconductor Quantum Structures and DevicesTechnical Physics Letters19980 iqtibos
    ABI

  14. Spontaneous Interlevel Emission from Quantum Dot and Quantum Well Laser Structures

    L. E. Vorobjev, D. A. Firsov, V. A. Shalygin +11

    MaqolaOchiq kirishLaser-Matter Interactions and ApplicationsMaterials science forum19980 iqtibos
    ABI