A. F. Tsatsul’nikov

5 ta ish

Russian Academy of Sciences

1. Low-threshold quantum-dot injection heterolaser emitting at 1.84 μm

   V. M. Ustinov, A. R. Kovsh, A. E. Zhukov +9

   MaqolaSemiconductor Quantum Structures and DevicesTechnical Physics Letters19980 iqtibos

   ABIABI:AkademIndex/1998.article.000030

2. GaAsN/GaAs and InGaAsN/GaAs heterostructures grown by molecular beam epitaxy

   A. Yu. Egorov, A. E. Zhukov, A. R. Kovsh +7

   MaqolaSemiconductor Quantum Structures and DevicesTechnical Physics Letters19980 iqtibos

   ABIABI:AkademIndex/1998.article.000107

3. Lasing in submonolayer InAs/AlGaAs structures without external optical confinement

   B. V. Volovik, A. F. Tsatsul’nikov, N. N. Ledentsov +11

   MaqolaSemiconductor Quantum Structures and DevicesTechnical Physics Letters19980 iqtibos

   ABIABI:AkademIndex/1998.article.000117

4. Electrical and Optical Properties of Highly Strained GaN Epilayers

   A. S. Usikov, W. V. Lundin, B. V. Pushnyĭ +8

   MaqolaOAOchiq kirishGaN-based semiconductor devices and materialsMaterials science forum19980 iqtibos

   ABIABI:AkademIndex/1998.article.000191

5. Lasing in the vertical direction in quantum-size InGaN/GaN multilayer heterostructures

   A. V. Sakharov, W. V. Lundin, V. A. Semenov +4

   MaqolaGaN-based semiconductor devices and materialsTechnical Physics Letters19990 iqtibos

   ABIABI:AkademIndex/1999.article.000100