Lasing in submonolayer InAs/AlGaAs structures without external optical confinement
B. V. VolovikInsitut für Festkörperphysik, Technische Universität Berlin, Hardenbergstr. 36, D-10623, Berlin, GermanyA. F. Tsatsul’nikovA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgN. N. LedentsovInstitute of Physics, St. Petersburg State University, PetrodvoretsМ. В. МаксимовA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgA. V. SakharovInsitut für Festkörperphysik, Technische Universität Berlin, Hardenbergstr. 36, D-10623, Berlin, GermanyA. Yu. EgorovInsitut für Festkörperphysik, Technische Universität Berlin, Hardenbergstr. 36, D-10623, Berlin, GermanyA. E. ZhukovInsitut für Festkörperphysik, Technische Universität Berlin, Berlin, GermanyA. R. KovshInsitut für Festkörperphysik, Technische Universität Berlin, Berlin, GermanyV. M. UstinovInsitut für Festkörperphysik, Technische Universität Berlin, Hardenbergstr. 36, D-10623, Berlin, GermanyP. S. Kop’evInstitute of Physics, St. Petersburg State University, PetrodvoretsZh. I. AlfërovInstitute of Physics, St. Petersburg State University, PetrodvoretsI. É. KozinInsitut für Festkörperphysik, Technische Universität Berlin, Hardenbergstr. 36, D-10623, Berlin, GermanyM. V. BelousovInstitute of Physics, St. Petersburg State University, PetrodvoretsD. BimbergA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg
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Structures having a set of planes with submonolayer InAs inclusions in an AlGaAs matrix were fabricated and studied. Lasing was observed as a result of optical excitation. It is shown that lasing takes place via the ground state of excitons localized at InAs islands and may be achieved without external optical confinement of the active region by wide-gap layers of lower refractive index. The low threshold excitation density shows that these structures may be used to develop low-threshold injection lasers in the visible range, exciton waveguides, and self-contained microcavities.
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