N. A. Pikhtin

5 ta ish

Fizika-Texnika Instituti

1. Semiconductor lasers with internal wavelength selection

   V. V. Zolotarev, A. Yu. Leshko, A. V. Lyutetskiĭ +10

   Maqola20133 iqtibos

   ABIABI:AkademIndex/2026.other.367662

2. Structural and Spectroscopic Studies of Epitaxial GaAs Layers Grown on Compliant Substrates Based on a Superstructure Layer and Protoporous Silicon

   П. В. Середин, D. L. Goloshchapov, Yu. Yu. Khudyakov +5

   Maqola20213 iqtibos

   ABIABI:AkademIndex/2026.other.373304

3. Two-section InGaAsP/InP Fabry-Perot laser with a 12 nm tuning range

   N. A. Pikhtin, A. Yu. Leshko, A. V. Lyutetskiĭ +4

   MaqolaSemiconductor Lasers and Optical DevicesTechnical Physics Letters19970 iqtibos

   ABIABI:AkademIndex/1997.article.000057

4. Multiwell laser heterostructures fabricated by liquid-phase epitaxy

   A. Yu. Leshko, A. V. Lyutetskiĭ, A. V. Murashova +7

   MaqolaSemiconductor Lasers and Optical DevicesTechnical Physics Letters19980 iqtibos

   ABIABI:AkademIndex/1998.article.000133

5. Influence of heating of the active region in InGaAsP/InP injection lasers on their spectral characteristics

   L. Ya. Karachinskiĭ, A. M. Georgievskii, N. A. Pikhtin +3

   MaqolaSemiconductor Quantum Structures and DevicesTechnical Physics Letters19990 iqtibos

   ABIABI:AkademIndex/1999.article.000189