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Semiconductor lasers with internal wavelength selection

V. V. ZolotarevRussian Academy of SciencesA. Yu. LeshkoIoffe Physical-Technical Institute, Russian Academy of Sciences, St. Petersburg, 194021, RussiaA. V. LyutetskiĭIoffe Physical-Technical Institute, Russian Academy of Sciences, St. Petersburg, 194021, RussiaD. N. NikolaevRussian Academy of SciencesN. A. PikhtinRussian Academy of SciencesA. A. PodoskinIoffe Physical-Technical Institute, Russian Academy of Sciences, St. Petersburg, 194021, RussiaS. O. SlipchenkoRussian Academy of SciencesZ. N. SokolovaRussian Academy of SciencesV. V. ShamakhovIoffe Physical-Technical Institute, Russian Academy of Sciences, St. Petersburg, 194021, RussiaИ. Н. АрсентьевRussian Academy of SciencesL. S. VavilovaRussian Academy of SciencesK. V. BakhvalovIoffe Physical-Technical Institute, Russian Academy of Sciences, St. Petersburg, 194021, RussiaI. S. TarasovIoffe Physical-Technical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia
2013en
ABI

Annotatsiya

Laser diodes with a deep built-in trapezoidal large-period diffraction grating have been developed on the basis of InGaAs/GaAs/AlGaAs heterostructures. The electroluminescence and stimulated emission spectra and light-current characteristics of diffraction-grating laser diodes have been studied. A substantial narrowing of both the luminescence and stimulated emission spectra was achieved due to the spectral selectivity of the grating. The maximum output optical power was 1 W at a drive current of 4 A. At the highest power, the lasing spectrum had a FWHM of ∼2 Å. A narrowing of the lasing spectrum of the diffraction-grating laser by tens of times was demonstrated, compared with that of a laser with a Fabry-Perot cavity.

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