G. F. Karavaev

7 ta ish

Fizika-Texnika Instituti

1. Nonlinear theory of recombination waves in semiconductors

   G. F. Karavaev, Konstantin Zolnikov

   MaqolaNonlinear Photonic SystemsRussian Physics Journal19800 iqtibos

   ABIABI:AkademIndex/1980.article.000126

2. Nonlinear theory of surface-helical instability of a semiconductor plasma. II. Calculation of linear parameters

   G. F. Karavaev, Борис Андреевич Успенский, N. L. Chuprikov

   MaqolaFluid Dynamics and Thin FilmsRussian Physics Journal19800 iqtibos

   ABIABI:AkademIndex/1980.article.000127

3. Experimental investigation of the nonlinear properties of the surface helical instability in germanium

   G. F. Karavaev, G. F. Karlova, V. I. Gaman

   MaqolaLaser-induced spectroscopy and plasmaRussian Physics Journal19810 iqtibos

   ABIABI:AkademIndex/1981.article.000092

4. UHF generation in sub-micron layers of GaAs

   G. F. Karavaev, Е. А. Ткаченко, E. V. Uimanov

   MaqolaSemiconductor Quantum Structures and DevicesRussian Physics Journal19890 iqtibos

   ABIABI:AkademIndex/1989.article.000130

5. Numerical analysis of the longitudinal electric current during resonance current flow in a n-GaAs/AlxGa1−xAs superlattice with doped quantum wells

   С. И. Борисенко, G. F. Karavaev

   MaqolaSemiconductor Quantum Structures and DevicesSemiconductors19980 iqtibos

   ABIABI:AkademIndex/1998.article.000228

6. Resonance tunneling of X-electrons in AlAs/GaAs(111) structures: Pseudopotential calculations and models

   G. F. Karavaev, В. Н. Чернышов

   MaqolaSemiconductor Quantum Structures and DevicesSemiconductors20010 iqtibos

   ABIABI:AkademIndex/2001.article.000200

7. Scattering of holes by the GaAs/AlAs (111) and (110) interfaces

   G. F. Karavaev, В. Н. Чернышов

   MaqolaSemiconductor Quantum Structures and DevicesSemiconductors20060 iqtibos

   ABIABI:AkademIndex/2006.article.000303