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Xizmatlar

Semiconductors

118 ta ish

Jurnal · ISSN 1063-7826

AkademScholarda batafsil koʻrsatkichlar

  1. Injection photodiode based on an n-CdS/p-CdTe heterostructure

    Ш. А. Мирсагатов, R. R. Kabulov, M. A. Makhmudov

    MaqolaChalcogenide Semiconductor Thin FilmsSemiconductors201319 iqtibos
    ABI

  2. Effect of temperature on the thermodynamic density of states in a quantizing magnetic field

    G. Gulyamov, У. И. Эркабоев, N. Yu. Sharibaev

    MaqolaQuantum and electron transport phenomenaSemiconductors201418 iqtibos
    ABI

  3. Negative magnetoresistance in silicon with manganese-atom complexes [Mn]4

    M. K. Bakhadirkhanov, K. S. Ayupov, G. H. Mavlyanov +1

    MaqolaMagneto-Optical Properties and ApplicationsSemiconductors201018 iqtibos
    ABI

  4. I–V characteristic of p-n structures based on a continuous solid solutions (Si2)1 − xx (CdS) x

    A.S. Saidov, A. Yu. Leyderman, Sh. N. Usmonov +1

    MaqolaMaterial Science and ThermodynamicsSemiconductors200913 iqtibos
    ABI

  5. Determination of the density of surface states at the semiconductor-insulator interface in a metal-insulator-semiconductor structure

    G. Gulyamov, N. Yu. Sharibaev

    MaqolaSurface and Thin Film PhenomenaSemiconductors201112 iqtibos
    ABI

  6. Anomalous Photoelectric Phenomena in Silicon with Nanoclusters of Manganese Atoms

    М. К. Бахадырханов, С. Б. Исамов, Н. Ф. Зикриллаев +1

    MaqolaSemiconductor materials and interfacesSemiconductors202111 iqtibos
    ABI

  7. On the tensosensitivity of a p-n junction under illumination

    G. Gulyamov, A. G. Gulyamov

    MaqolaOptical Polarization and EllipsometrySemiconductors201510 iqtibos
    ABI

  8. SPECTRAL DEPENDENCE OF THE PHOTOCONDUCTIVITY OF GеxSi1 – x TYPE GRADED-GAP STRUCTURES OBTAINED BY DIFFUSION TECHNOLOGY

    Н. Ф. Зикриллаев, S. Koveshnikov, С. Б. Исамов +2

    MaqolaSemiconductor materials and interfacesSemiconductors20229 iqtibos
    ABI

  9. Spectra of low-temperature photoluminescence in thin polycrystalline CdTe films

    Б. З. Полвонов, N. Kh. Yuldashev

    MaqolaAdvanced Semiconductor Detectors and MaterialsSemiconductors20169 iqtibos
    ABI

  10. Growth of (InSb)1 − x (Sn2) x films on GaAs substrates by liquid-phase epitaxy

    A.S. Saidov, М. С. Саидов, Sh. N. Usmonov +1

    MaqolaSemiconductor Quantum Structures and DevicesSemiconductors20109 iqtibos
    ABI

  11. Study of the current-voltage characteristic of the n-CdS/p-CdTe heterostructure depending on temperature

    Sh. N. Usmonov, Ш. А. Мирсагатов, A. Yu. Leyderman

    MaqolaChalcogenide Semiconductor Thin FilmsSemiconductors20108 iqtibos
    ABI

  12. Adsorption of alkali metals and their effect on electronic properties of grain boundaries in bulk of polycrystalline silicon

    L. O. Olimov

    MaqolaThin-Film Transistor TechnologiesSemiconductors20108 iqtibos
    ABI

  13. Possibility of obtaining the (GaSb)1 − x (Si2) x films on silicon substrates by the method of liquid-phase epitaxy

    Sh. N. Usmonov, A.S. Saidov, A. Yu. Leyderman +2

    MaqolaSemiconductor materials and interfacesSemiconductors20098 iqtibos
    ABI

  14. EMF Induced in a p–n Junction under a Strong Microwave Field and Light

    G. Gulyamov, У. И. Эркабоев, N. Yu. Sharibaev +1

    MaqolaMechanical and Optical ResonatorsSemiconductors20197 iqtibos
    ABI

  15. Effect of alkali metals on the electronic properties of grain boundaries on a polycrystalline silicon surface

    L. O. Olimov

    MaqolaSilicon and Solar Cell TechnologiesSemiconductors20127 iqtibos
    ABI

  16. Specific features of magnetoresistance in overcompensated manganese-doped silicon

    M. K. Bakhadirkhanov, G. H. Mavlonov, X. M. Iliev +3

    MaqolaMagnetic Properties and ApplicationsSemiconductors20147 iqtibos
    ABI

  17. Two- and Three-Photon Linear-Circular Dichroism in Cubic-Symmetry Semiconductors

    Rustam Yavkachovich Rasulov, Ravshan Rustamovich Sultonov, Bahodir Bahromovich Akhmedov

    MaqolaNonlinear Optical Materials StudiesSemiconductors20206 iqtibos
    ABI

  18. Kinetics of attaining the steady state of hot carrier thermoelectric power in a p-n junction with consideration for lattice heating

    G. Gulyamov, М. Г. Дадамирзаев, S. R. Boĭdedaev

    MaqolaAdvanced Thermoelectric Materials and DevicesSemiconductors20006 iqtibos
    ABI

  19. Hot carrier electromotive force caused by surface potential modulation in a strong microwave field

    G. Gulyamov, М. Г. Дадамирзаев, S. R. Boĭdedaev

    MaqolaElectromagnetic Effects on MaterialsSemiconductors20006 iqtibos
    ABI

  20. Structure of thermoelectric films of higher manganese silicide on silicon according to electron microscopy data

    Andrey Orekhov, T. S. Kamilov, B.V. Ibragimova +2

    MaqolaSemiconductor materials and interfacesSemiconductors20175 iqtibos
    ABI

  21. Growth, structure, and properties of GaAs-based (GaAs)1–x–y (Ge2) x (ZnSe) y epitaxial films

    S.Z. Zaynabidinov, A.S. Saidov, A. Yu. Leĭderman +4

    MaqolaSemiconductor Quantum Structures and DevicesSemiconductors20165 iqtibos
    ABI

  22. Correlation between the material parameters and conditions for the excitation of recombination waves in Si〈;S〉

    М. К. Бахадырханов, U. Kh. Kurbanova, Н. Ф. Зикриллаев

    MaqolaSemiconductor materials and interfacesSemiconductors19995 iqtibos
    ABI

  23. The nonideality coefficient of current-voltage characteristics for p-n junctions in a high ultrahigh-frequency (microwave) field

    S. H. Shamirzaev, G. Gulyamov, М. Г. Дадамирзаев +1

    MaqolaSilicon and Solar Cell TechnologiesSemiconductors20095 iqtibos
    ABI

  24. Eddy currents appearing in a p-n junction in a high microwave field

    S. H. Shamirzaev, G. Gulyamov, М. Г. Дадамирзаев +1

    MaqolaElectromagnetic Effects on MaterialsSemiconductors20115 iqtibos
    ABI

  25. Properties of precisely compensated semiconductors

    Smagul Karazhanov

    MaqolaSilicon and Solar Cell TechnologiesSemiconductors20004 iqtibos
    ABI