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A.S. Saidov

107 ta ish

Oʻzbekiston Respublikasi Fanlar Akademiyasi

AkademScholarda batafsil koʻrsatkichlar

  1. Liquid-phase epitaxy of solid solutions (Ge2)1−x(ZnSe)x

    A.S. Saidov, A. Sh. Razzakov, V.A. Risaeva +1

    MaqolaChalcogenide Semiconductor Thin FilmsMaterials Chemistry and Physics200126 iqtibos
    ABI

  2. I–V characteristic of p-n structures based on a continuous solid solutions (Si2)1 − xx (CdS) x

    A.S. Saidov, A. Yu. Leyderman, Sh. N. Usmonov +1

    MaqolaMaterial Science and ThermodynamicsSemiconductors200913 iqtibos
    ABI

  3. Investigation of the Crystallographic Perfection and Photoluminescence Spectrum of the Epitaxial Films of (Si2)1-x(GaP)x<a:math xmlns:a="http://www.w3.org/1998/Math/MathML" id="M1"> <a:mfenced open="(" close=")" separators="|"> <a:mrow> <a:mn>0</a:mn> <a:mo>≤</a:mo> <a:mi>x</a:mi> <a:mo>≤</a:mo> <a:mn>1</a:mn> </a:mrow> </a:mfenced> </a:math> Solid Solution, Grown on Si and GaP Substrates with the Crystallographic Orientation (111)

    A.S. Saidov, D. V. Saparov, Sh. N. Usmonov +5

    MaqolaOchiq kirishSemiconductor Quantum Structures and DevicesAdvances in Condensed Matter Physics202113 iqtibos
    ABI

  4. Thermovoltaic properties of technical silicon melted by solar radiation

    A.S. Saidov, A. A. Abakumov, М. С. Саидов +2

    MaqolaDiverse Industrial Engineering TechnologiesApplied Solar Energy200713 iqtibos
    ABI

  5. Growth of (InSb)1 − x (Sn2) x films on GaAs substrates by liquid-phase epitaxy

    A.S. Saidov, М. С. Саидов, Sh. N. Usmonov +1

    MaqolaSemiconductor Quantum Structures and DevicesSemiconductors20109 iqtibos
    ABI

  6. Photothermovoltaic Effect in p-Si−n-(Si2)1 –x–y(Ge2)x(ZnSe)y Structure

    A.S. Saidov, Sh. N. Usmonov, K. A. Amonov +2

    MaqolaPhase-change materials and chalcogenidesApplied Solar Energy20199 iqtibos
    ABI

  7. Structural and some electrophysical properties of the solid solutions Si1 − x Sn x (0 ≤ x ≤ 0.04)

    A.S. Saidov, Sh. N. Usmonov, M. U. Kalanov +2

    MaqolaAdvanced Surface Polishing TechniquesPhysics of the Solid State20138 iqtibos
    ABI

  8. Structural Studies of the Epitaxial Layer of a Substitutional Solid Solution (GaAs)<sub>1−<i>x</i></sub>(ZnSe)<sub><i>x</i></sub> with Nanocrystals

    A.S. Saidov, Sh. N. Usmonov, D. V. Saparov

    MaqolaOchiq kirishQuantum Dots Synthesis And PropertiesAdvances in Materials Science and Engineering20198 iqtibos
    ABI

  9. Growth of (GaAs)1 − x (ZnSe) x solid solution films and investigation of their structural and some photoelectric properties

    A.S. Saidov, М. С. Саидов, Sh. N. Usmonov +4

    MaqolaChalcogenide Semiconductor Thin FilmsPhysics of the Solid State20118 iqtibos
    ABI

  10. Possibility of obtaining the (GaSb)1 − x (Si2) x films on silicon substrates by the method of liquid-phase epitaxy

    Sh. N. Usmonov, A.S. Saidov, A. Yu. Leyderman +2

    MaqolaSemiconductor materials and interfacesSemiconductors20098 iqtibos
    ABI

  11. Effect of injection depletion in p-n heterostructures based on solid solutions (Si2)1 − x − y (Ge2) x (GaAs) y , (Si2)1 − x (CdS) x , (InSb)1 − x (Sn2) x , and CdTe1 − x S x

    Sh. N. Usmonov, A.S. Saidov, A. Yu. Leĭderman

    MaqolaNear-Field Optical MicroscopyPhysics of the Solid State20147 iqtibos
    ABI

  12. Growth and Morphological Study of Graded-Gap Si–Si1 – xGex–GaAs Structures

    A.S. Saidov, A. Sh. Razzokov

    MaqolaSemiconductor materials and interfacesCrystallography Reports20227 iqtibos
    ABI

  13. Features of liquid-phase epitaxy of new solid solutions of (GaAs)1−y−z(Ge<sub>2</sub>)y(ZnSe)z and their photoelectric properties

    A.S. Saidov, D. V. Saparov, Sh. N. Usmonov +2

    MaqolaChalcogenide Semiconductor Thin FilmsInternational Journal of Modern Physics B20227 iqtibos
    ABI

  14. Features of growing Si- and Si<sub>1-<i>x</i></sub>Ge<sub><i>x</i></sub>-single-crystal films from solution-melt based on tin

    A. Sh. Razzokov, A.S. Saidov, V. V. Girzhon +1

    MaqolaOchiq kirishSilicon Nanostructures and PhotoluminescenceJournal of Physical Studies20226 iqtibos
    ABI

  15. Direct solar conversion to electricity nanoscale effects in pSi–n(Si2)1–x (ZnSe) x (0 ≤ x ≤ 0.01) of solar cells

    A.S. Saidov, K. A. Amonov, B. R. Kutlimurotov

    MaqolaSemiconductor materials and interfacesApplied Solar Energy20166 iqtibos
    ABI

  16. Peculiarities of photosensitivity of n(GaAs)–p(GaAs)1–x–y (ZnSe) x (Ge2) y structures with quantum dots

    A.S. Saidov, С. З. Зайнабидинов, M. U. Kalanov +2

    MaqolaSemiconductor Quantum Structures and DevicesApplied Solar Energy20156 iqtibos
    ABI

  17. Synthesis, Structure and Electro-Physical Properties n-GaAs–p-(GaAs)1 –x–y(Ge2)x(ZnSe)y Heterostructures (Review)

    С. З. Зайнабидинов, A.S. Saidov, M. U. Kalanov +1

    MaqolaSemiconductor materials and interfacesApplied Solar Energy20195 iqtibos
    ABI

  18. Growth, structure, and properties of GaAs-based (GaAs)1–x–y (Ge2) x (ZnSe) y epitaxial films

    S.Z. Zaynabidinov, A.S. Saidov, A. Yu. Leĭderman +4

    MaqolaSemiconductor Quantum Structures and DevicesSemiconductors20165 iqtibos
    ABI

  19. The thermovoltaic effect in variband solid solution Si1–x Ge x (0 ≤ x ≤ 1)

    A.S. Saidov, A. Yu. Leyderman, A. B. Karshiev

    MaqolaMaterial Science and ThermodynamicsTechnical Physics Letters20164 iqtibos
    ABI

  20. Obtaining Si-Si<sub>1-x</sub>Ge<sub>x</sub>-(Si<sub>1-x</sub>Ge<sub>x</sub>)<sub>1-z</sub>(Al<sub>1-y</sub>Ga<sub>y</sub>As)<sub>z</sub>-Si<sub>1-x</sub>Ge<sub>x</sub>-(Si<sub>1-x</sub>Ge<sub>x</sub>)<sub>1-z</sub>(Al<sub>1-y</sub>Ga<sub>y</sub>As)<sub>z</sub> Structures from a Tin Solution-Melt in a Single Technological Cycle

    A.S. Saidov, A. Sh. Razzokov, С.И. Петрушенко +1

    MaqolaOchiq kirishSemiconductor materials and interfacesActa Physica Polonica A20224 iqtibos
    ABI

  21. Structure, Morphology and Photoelectric Properties of n-GaAs--p-(GaAs)1--x(Ge2)х Heterostructure

    S.Z. Zaynabidinov, A.S. Saidov, Akramjon Y. Boboev +1

    MaqolaSemiconductor materials and interfacesHerald of the Bauman Moscow State Technical University Series Natural Sciences20224 iqtibos
    ABI

  22. Studies of the crystal structure of solid solutions (Sn2)1−x−y(GaAs)x(ZnSe)y, (GaAs)1−x(ZnSe)x grown from liquid phase

    A. Sh. Razzokov, A.S. Saidov, B. Allabergenov +3

    MaqolaChalcogenide Semiconductor Thin FilmsJournal of Crystal Growth20234 iqtibos
    ABI

  23. Features of the Properties of the Surface of (GaAs)1 – x – у(Ge2)x(ZnSe)y Semiconductor Solid Solution with ZnSe Quantum Dots

    С. З. Зайнабидинов, A.S. Saidov, Akramjon Y. Boboev +1

    MaqolaSemiconductor Quantum Structures and DevicesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20214 iqtibos
    ABI

  24. Spectral and current-voltage characteristics of Si-Si1−xGex heterostructures grown by liquid phase epitaxy

    A.S. Saidov, А. Кутлимратов, Б. Сапаев +1

    MaqolaSilicon Nanostructures and PhotoluminescenceTechnical Physics Letters20014 iqtibos
    ABI

  25. Photosensitivity of pSi-n(Si2)1–x–y(Ge2) x (ZnSe) y heterostructures with quantum dots

    A.S. Saidov, Sh. N. Usmonov, K. A. Amonov +2

    MaqolaSemiconductor materials and interfacesApplied Solar Energy20174 iqtibos
    ABI