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Xizmatlar

С. З. Зайнабидинов

34 ta ish

Andijon davlat universiteti

AkademScholarda batafsil koʻrsatkichlar

  1. Effect of γ-Irradiation on Structure and Electrophysical Properties of S-Doped ZnO Films

    С. З. Зайнабидинов, Akramjon Y. Boboev, Nuritdin Y. Yunusaliyev

    MaqolaOchiq kirishZnO doping and propertiesEast European Journal of Physics202410 iqtibos
    ABI

  2. Dopant microassociation mechanisms in Si〈Mn〉 and Si〈Ni〉

    С. З. Зайнабидинов, K. N. Musaev, N. A. Turgunov +1

    Maqola20127 iqtibos
    ABI

  3. Prospects for the use of metal-oxide semiconductors in energy converters

    С. З. Зайнабидинов, С. И. Рембеза, Е. С. Рембеза +1

    MaqolaZnO doping and propertiesApplied Solar Energy20196 iqtibos
    ABI

  4. Structural Peculiarities of the (ZnSe)1 – x – y(Ge2)x(GaAs1 – δBiδ)y Solid Solution with Various Nanoinclusions

    С. З. Зайнабидинов, Sharifa B. Utamuradova, Akramjon Y. Boboev

    MaqolaChalcogenide Semiconductor Thin FilmsJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20226 iqtibos
    ABI

  5. Peculiarities of photosensitivity of n(GaAs)–p(GaAs)1–x–y (ZnSe) x (Ge2) y structures with quantum dots

    A.S. Saidov, С. З. Зайнабидинов, M. U. Kalanov +2

    MaqolaSemiconductor Quantum Structures and DevicesApplied Solar Energy20156 iqtibos
    ABI

  6. Synthesis, Structure and Electro-Physical Properties n-GaAs–p-(GaAs)1 –x–y(Ge2)x(ZnSe)y Heterostructures (Review)

    С. З. Зайнабидинов, A.S. Saidov, M. U. Kalanov +1

    MaqolaSemiconductor materials and interfacesApplied Solar Energy20195 iqtibos
    ABI

  7. Structural Properties of Al-Doped ZnO Films

    С. З. Зайнабидинов, Shakhriyor Kh. Yulchiev, Akramjon Y. Boboev +2

    MaqolaOchiq kirishZnO doping and propertiesEast European Journal of Physics20245 iqtibos
    ABI

  8. Features of the Properties of the Surface of (GaAs)1 – x – у(Ge2)x(ZnSe)y Semiconductor Solid Solution with ZnSe Quantum Dots

    С. З. Зайнабидинов, A.S. Saidov, Akramjon Y. Boboev +1

    MaqolaSemiconductor Quantum Structures and DevicesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20214 iqtibos
    ABI

  9. Photoelectric Properties of n-ZnO/p-Si Heterostructures

    С. З. Зайнабидинов, A. Y. Boboev, Kh. A. Makhmudov +1

    MaqolaZnO doping and propertiesApplied Solar Energy20214 iqtibos
    ABI

  10. An Optimized Ultrasonic Spray Pyrolysis Device for The Production of Metal Oxide Films and Their Morfology

    С. З. Зайнабидинов, Akramjon Y. Boboev, Nuritdin Y. Yunusaliyev +1

    MaqolaOchiq kirishZnO doping and propertiesEast European Journal of Physics20244 iqtibos
    ABI

  11. Influence of Deep-Level Impurities on the Strain Electric Properties of Monocrystalline Silicon

    С. З. Зайнабидинов, О. О. Маматкаримов, О. Химматкулов +1

    MaqolaOchiq kirishSilicon Nanostructures and PhotoluminescenceUkrainian Journal of Physics20174 iqtibos
    ABI

  12. The Influence of the Impurities with Deep Levels on the Iron Behavior in Silicon

    С. З. Зайнабидинов, Kh.S. Daliev, K. P. Abdurakhmanov +3

    MaqolaSilicon and Solar Cell TechnologiesModern Physics Letters B19974 iqtibos
    ABI

  13. Dynamic Strain Conductivity of Compensated Silicon

    С. З. Зайнабидинов, О. О. Маматкаримов, I. G. Tursunov +1

    MaqolaElectromagnetic Effects on MaterialsModern Physics Letters B19982 iqtibos
    ABI

  14. Dynamic strain-sensitive characteristics of the Schottky-barrier diodes under a pulsed uniform pressure

    О. О. Маматкаримов, С. З. Зайнабидинов, Azizbek Abduraimov +2

    MaqolaElectromagnetic Launch and Propulsion TechnologySemiconductors20002 iqtibos
    ABI

  15. Influence of Isotropic Pressure on the Current–Voltage Characteristics of Surface-Barrier Diodes Sb–p-Si〈Mn〉–Au

    С. З. Зайнабидинов, I. G. Tursunov, О. Химматкулов

    MaqolaSemiconductor materials and interfacesSemiconductors20182 iqtibos
    ABI

  16. Formation and kinetics of decomposition of impurity nickel precipitates in silicon

    С. З. Зайнабидинов, N. A. Turgunov

    Maqola20042 iqtibos
    ABI

  17. Investigation of the electrophysical properties and structures of impurity-defective complexes in silicon doped with palladium

    Sh. Makhkamov, N.A. Tursunov, M. Karimov +4

    MaqolaSilicon Nanostructures and PhotoluminescenceRussian Physics Journal20101 iqtibos
    ABI

  18. Investigation of the influence of external effects on the behavior of gold impurity in silicon

    С. З. Зайнабидинов, О. О. Маматкаримов, I. G. Tursunov +1

    MaqolaSemiconductor materials and interfacesSemiconductors20001 iqtibos
    ABI

  19. Baric Impurity Effects in Silicon

    Victor I. Fistul, Alisher Baxadirov, С. З. Зайнабидинов

    MaqolaSilicon and Solar Cell Technologiesphysica status solidi (a)19931 iqtibos
    ABI

  20. Effect of high hydrostatic pressure on the electrophysical properties of doped silicon crystals and devices based on them

    С. З. Зайнабидинов, P.I. Baranskiy, И. Н. Каримов +2

    MaqolaElectromagnetic Effects on MaterialsSolid-State Electronics19951 iqtibos
    ABI

  21. Influence of Germanium and Zinc Selenium Nanocrystals on the Photoelectric Properties of the n-GaAs – p-(GaAs)0.69(Ge2)0.17(ZnSe)0.14 Heterostructure

    С. З. Зайнабидинов, Akramjon Y. Boboev, Jakhongir N. Usmonov

    MaqolaOchiq kirishSemiconductor materials and interfacesAlternative Energy and Ecology (ISJAEE)20191 iqtibos
    ABI

  22. Effect of thermal-field treatment and ionizing radiation on the energy spectrum of interfacial states at the Si-SiO2 interface of a MOS transistor

    A. É. Atamuratov, С. З. Зайнабидинов, А. Yusupov +2

    MaqolaSemiconductor materials and devicesTechnical Physics19970 iqtibos
    ABI

  23. Diffusion of erbium in silicon

    С. З. Зайнабидинов, D.E. Nazirov, A. Zh. Akbarov +2

    MaqolaSilicon and Solar Cell TechnologiesTechnical Physics Letters19980 iqtibos
    ABI

  24. The effect of thermal treatment on the charge-carrier lifetime in nickel-doped silicon

    M. Karimov, A. O. Kurbanov, С. З. Зайнабидинов +1

    MaqolaSilicon and Solar Cell TechnologiesRussian Physics Journal20060 iqtibos
    ABI

  25. Diffusion, solubility, and electrical properties of scandium and praseodymium in silicon

    С. З. Зайнабидинов, D. É. Nazyrov

    MaqolaSilicon and Solar Cell TechnologiesRussian Physics Journal20070 iqtibos
    ABI