A. O. Kurbanov

7 ta ish

Andijon davlat universiteti

1. Nickel-Dopant Atom Clusters and their Effect on the Recombination Properties of Silicon

   S.Z. Zaynabidinov, A. O. Kurbanov

   MaqolaSilicon and Solar Cell TechnologiesHerald of the Bauman Moscow State Technical University Series Natural Sciences20196 iqtibos

   ABIABI:AkademIndex/2019.article.000379

2. Interaction of deep impurities with radiation defects in n-Si at γ-irradiation

   Sh. Makhkamov, M. Karimov, Z. M. Khakimov +4

   MaqolaSilicon and Solar Cell TechnologiesRadiation effects and defects in solids20052 iqtibos

   ABIABI:AkademIndex/2026.other.235254

3. On the thermostability of electrical properties of p-Si<P, Ni> and p-Si<P, Cu>

   Sh. Makhkamov, M. Karimov, A. O. Kurbanov +2

   MaqolaSilicon and Solar Cell TechnologiesRussian Physics Journal20051 iqtibos

   ABIABI:AkademIndex/2026.other.500801

4. Interaction of deep level impurities with radiation defects in silicon under γ -irradiation

   N.J. Odilova, M. Karimov, K. A. Begmatov +2

   MaqolaSilicon and Solar Cell Technologies20030 iqtibos

   ABIABI:AkademIndex/2003.article.000389

5. The effect of thermal treatment on the charge-carrier lifetime in nickel-doped silicon

   M. Karimov, A. O. Kurbanov, С. З. Зайнабидинов +1

   MaqolaSilicon and Solar Cell TechnologiesRussian Physics Journal20060 iqtibos

   ABIABI:AkademIndex/2006.article.000333

6. Influence of γ- radiation on the recombination properties of P-type nickel doped silicon

   A. O. Kurbanov, M. Karimov

   MaqolaSilicon and Solar Cell Technologies20060 iqtibos

   ABIABI:AkademIndex/2006.article.000353

7. Study of influence of γ-quanta 60 Co on recombination properties of Si and Si

   M. Karimov, Sh. Makhkamov, Sh. A. Makhmudov +2

   MaqolaSemiconductor materials and interfaces20070 iqtibos

   ABIABI:AkademIndex/2007.article.000467