K. A. Begmatov

7 ta ish

Oʻzbekiston Respublikasi Fanlar Akademiyasi

1. The radiation-induced defects production in P-type silicon doped by impurities of transitional elements

   Marat S. Yunusov, M. Karimov, M. N. Alkulov +1

   MaqolaSilicon and Solar Cell TechnologiesRadiation effects and defects in solids20003 iqtibos

   ABIABI:AkademIndex/2026.other.279519

2. Interaction of deep impurities with radiation defects in n-Si at γ-irradiation

   Sh. Makhkamov, M. Karimov, Z. M. Khakimov +4

   MaqolaSilicon and Solar Cell TechnologiesRadiation effects and defects in solids20052 iqtibos

   ABIABI:AkademIndex/2026.other.235254

3. On several regularities of deep levels of d-impurities in silicon

   Marat S. Yunusov, A. Akhmadaliev, Б. Л. Оксенгендлер +1

   MaqolaSilicon and Solar Cell Technologiesphysica status solidi (a)19952 iqtibos

   ABIABI:AkademIndex/2026.other.408791

4. Relaxation kinetics of photoconductivity in р-silicon compensated by phosphorus atoms

   M. Karimov, Sh. Makhkamov, N.A. Tursunov +4

   MaqolaAdvanced Materials and Semiconductor TechnologiesRussian Physics Journal20091 iqtibos

   ABIABI:AkademIndex/2009.article.000313

5. Semiconductor detector as ionising radiation dosimeter

   Marat S. Yunusov, A. Akhmadaliev, K. A. Begmatov

   MaqolaRadiation Detection and Scintillator TechnologiesRadiation Physics and Chemistry19951 iqtibos

   ABIABI:AkademIndex/2026.other.279517

6. Interaction of deep level impurities with radiation defects in silicon under γ -irradiation

   N.J. Odilova, M. Karimov, K. A. Begmatov +2

   MaqolaSilicon and Solar Cell Technologies20030 iqtibos

   ABIABI:AkademIndex/2003.article.000389

7. Formation processes of radiation defects in silicon at high temperature irradiation

   N.A. Tursunov, Sh. Makhkamov, M. Ashurov +3

   MaqolaSilicon and Solar Cell Technologies20040 iqtibos

   ABIABI:AkademIndex/2004.article.000394