M. Ashurov

20 ta ish

Institute of Nuclear Physics

1. The investigation of charge carriers life time dependence on degree of silicon doping with admixtures creating the deep levels

   Sh. Makhkamov, N.A. Tursunov, M. Ashurov

   MaqolaSemiconductor Quantum Structures and Devices19950 iqtibos

   ABIABI:AkademIndex/1995.article.000175

2. Investigation of degradation of the characteristics of silicon solar elements while the influence of penetrating radiation

   Sh. Makhkamov, N.A. Tursunov, M. Ashurov +2

   MaqolaGraphite, nuclear technology, radiation studies19950 iqtibos

   ABIABI:AkademIndex/1995.article.000183

3. The peculiarities of behaviour of gold impurities in silicon at radiation-thermal influences

   Sh. Makhkamov, N.A. Tursunov, M. Ashurov +1

   MaqolaSilicon and Solar Cell Technologies19970 iqtibos

   ABIABI:AkademIndex/1997.article.000299

4. The study of influence of the duration of formation of p + -layer on the process of radiation defect production in silicon structures

   Sh. Makhkamov, N.A. Tursunov, M. Ashurov +2

   MaqolaSilicon and Solar Cell Technologies19970 iqtibos

   ABIABI:AkademIndex/1997.article.000307

5. The influence of technological regimes of the silicon solar cells production on the formation of radiation effects

   M. Ashurov, Sh. Makhkamov, S.V. Martnchenko +2

   MaqolaEnvironmental Sustainability and Technology19970 iqtibos

   ABIABI:AkademIndex/1997.article.000313

6. Investigation of Influence of Thermal and Radiation Processing on Impurity Centers in Silicon and Silicon Based Structures

   M. Ashurov, Sh. Makhkamov, N.A. Tursunov +1

   MaqolaSemiconductor materials and interfacesMRS Proceedings19980 iqtibos

   ABIABI:AkademIndex/1998.article.000278

7. Characteristics of the formation of radiation defects in silicon structures

   Sh. Makhkamov, N.A. Tursunov, M. Ashurov +2

   MaqolaGraphite, nuclear technology, radiation studiesTechnical Physics19990 iqtibos

   ABIABI:AkademIndex/1999.article.000127

8. The peculiarities of recombination of charge carriers in silicon with impurity-defect complexes

   Sh. Makhkamov, N.A. Tursunov, M. Ashurov +1

   MaqolaSemiconductor materials and interfaces19990 iqtibos

   ABIABI:AkademIndex/1999.article.000277

9. Peculiarities of radiation defects influence on degradation of photoenergetic characteristics of silicon solar cells

   Sh. Makhkamov, N.A. Tursunov, M. Ashurov +1

   MaqolaSilicon and Solar Cell Technologies19990 iqtibos

   ABIABI:AkademIndex/1999.article.000293

10. Formation of radiation defects in silicon structures under low-intensity electron irradiation

    Sh. Makhkamov, N.A. Tursunov, M. Ashurov +2

    MaqolaOAOchiq kirishSemiconductor materials and interfacesSemiconductor Science and Technology20010 iqtibos

    ABIABI:AkademIndex/2001.article.000146

11. Peculiarities of silicon structures doped by neutron-transmutation

    Sh. Makhkamov, N.A. Tursunov, M. Ashurov +2

    MaqolaElectric Power Systems and Control20020 iqtibos

    ABIABI:AkademIndex/2002.article.000351

12. Formation processes of radiation defects in silicon at high temperature irradiation

    N.A. Tursunov, Sh. Makhkamov, M. Ashurov +3

    MaqolaSilicon and Solar Cell Technologies20040 iqtibos

    ABIABI:AkademIndex/2004.article.000394

13. Investigations of radiation induced transient absorption and emission in the quartz-polymer optical fiber

    M. Ashurov, Maksudbek Baydjanov, É. M. Gasanov +5

    MaqolaGlass properties and applications20060 iqtibos

    ABIABI:AkademIndex/2006.article.000416

14. Two-stage doping of silicon with phosphorus-32 and sulfur-32 isotopes

    Sh. Makhkamov, N.A. Tursunov, M. Karimov +4

    MaqolaSilicon and Solar Cell TechnologiesTechnical Physics Letters20080 iqtibos

    ABIABI:AkademIndex/2008.article.000349

15. Influence of γ-Radiation Dose Growth and Dose Rates on Luminescence Properties of Pure Silica Core Fibers with High-OH Group Content

    M. Ashurov, Maksudbek Baydjanov, É. M. Gasanov +3

    MaqolaOAOchiq kirishGlass properties and applicationsJapanese Journal of Applied Physics20110 iqtibos

    ABIABI:AkademIndex/2011.article.000229

16. Thermovoltaic properties of microgranular silicon

    B. M. Abdurahmanov, M. M. Adilov, M. Ashurov +2

    MaqolaSemiconductor Quantum Structures and DevicesApplied Solar Energy20110 iqtibos

    ABIABI:AkademIndex/2011.article.000319

17. Influence of γ-Radiation Dose Growth and Dose Rates on Luminescence Properties of Pure Silica Core Fibers with High-OH Group Content

    M. Ashurov, Maksudbek Baydjanov, É. M. Gasanov +3

    MaqolaLuminescence Properties of Advanced MaterialsJapanese Journal of Applied Physics20110 iqtibos

    ABIABI:AkademIndex/2011.article.000557

18. Dose and Dose Rate Dependency of Radiationinduced Transient Absorption in Pure Silica Optical Fibers Under Gamma Irradiation

    Maksudbek Baydjanov, M. Ashurov, И. Нуритдинов +2

    MaqolaGlass properties and applications20170 iqtibos

    ABIABI:AkademIndex/2017.article.000943

19. Features of Radiation Physics of Topological Insulators

    B. L. Oksengendler, С. Е. Максимов, S. H. Suleymanov +7

    MaqolaTopological Materials and PhenomenaJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20240 iqtibos

    ABIABI:AkademIndex/2024.article.010362

20. An electronic approach to understanding the kinetics of hydrogen peroxide formation

    M. Ashurov, Б. Л. Оксенгендлер, N. N. Turaeva

    MaqolaPhotoreceptor and optogenetics researchChemical Physics20250 iqtibos

    ABIABI:AkademIndex/2025.article.005615