Formation of radiation defects in silicon structures under low-intensity electron irradiation

Formation of A-centres and divacancies in silicon p+-n-n+ structures was investigated for 4 MeV electron irradiation in the low-intensity range of 1011-5×1012 cm-2 s-1. It is shown that the introduction rates of both A-centres and divacancies increase with intensity in this range and then saturate at intensities above 1012 cm-2 s-1. Using the data from the literature the introduction rates of these defects are discussed in a wide range of intensities of electron irradiation of 1011-1015 cm-2 s-1, indicating a consistent role of carbon interstitial atoms and electron-enhanced migration of Si self-interstitials in the observed behaviour of introduction rates.

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