The study of influence of the duration of formation of p + -layer on the process of radiation defect production in silicon structures
Sh. MakhkamovN.A. TursunovM. AshurovR.P. SaidovS.V. MartynchenkoAN RU, Tashkent (Uzbekistan). Inst. Yadernoj Fiziki
1997en
Ochiq kirish: yoʻq
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