Influence of Isotropic Pressure on the Current–Voltage Characteristics of Surface-Barrier Diodes Sb–p-Si〈Mn〉–Au
С. З. ЗайнабидиновNational University of Uzbekistan, Tashkent, 100174, UzbekistanI. G. TursunovNational University of Uzbekistan, Tashkent, 100174, UzbekistanО. ХимматкуловNational University of Uzbekistan, Tashkent, 100174, Uzbekistan
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Annotatsiya
The influence of hydrostatic pressure on the current–voltage characteristics of surface-barrier diode structures of the Sb–p-Si〈Mn〉–Au type are investigated. The potential-barrier height and the baric coefficient of its variation are found to be eϕδ = 0.75 eV and δ =–1.54 × 10–11 eV/Pa, respectively.
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