Asosiy kontentga oʻtish
AkademIndex

Xizmatlar

A. É. Atamuratov

41 ta ish

Urganch davlat universiteti

AkademScholarda batafsil koʻrsatkichlar

  1. Self-heating effect in nanoscale SOI Junctionless FinFET with different geometries

    A. É. Atamuratov, B. O. Jabbarova, M. M. Khalilloev +2

    PreprintOchiq kirishAdvancements in Semiconductor Devices and Circuit Design20216 iqtibos
    ABI

  2. The Effect of the Fin Shape and Thickness of the Buried Oxide on the DIBL Effect in an SOI FinFET

    A.E. Abdikarimov, А. Yusupov, A. É. Atamuratov

    MaqolaSemiconductor materials and devicesTechnical Physics Letters20186 iqtibos
    ABI

  3. Experimental Assessment of the Nonuniform Radiation-Induced Space-Charge Distribution in the Surface Region of Silicon

    A. É. Atamuratov, А. Yusupov, Khidir A. Adinaev

    MaqolaAdvanced Energy Technologies and Civil Engineering InnovationsInorganic Materials20015 iqtibos
    ABI

  4. The Self-Heating Effect in Junctionless Fin Field-Effect Transistors Based on Silicon-on-Insulator Structures with Different Channel Shapes

    A. É. Atamuratov, B. O. Jabbarova, M. M. Khalilloev +1

    MaqolaAdvancements in Semiconductor Devices and Circuit DesignTechnical Physics Letters20215 iqtibos
    ABI

  5. Optimization of vertically stacked nanosheet FET immune to self-heating

    M. Balasubbareddy, K. Sivasankaran, A. É. Atamuratov +1

    MaqolaSemiconductor materials and devicesMicro and Nanostructures20235 iqtibos
    ABI

  6. Influence of device geometry on electrical characteristics of a 10.7 nm SOI-FinFET

    A.E. Abdikarimov, Guillermo Indalecio, Enrique Comesaña +4

    MaqolaAdvancements in Semiconductor Devices and Circuit Design20145 iqtibos
    ABI

  7. Simulation of DIBL effect in 25 nm SOI-FinFET with the different body shapes

    A. É. Atamuratov, A.E. Abdikarimov, M. M. Khalilloev +4

    MaqolaOchiq kirishAdvancements in Semiconductor Devices and Circuit DesignNanosystems Physics Chemistry Mathematics20174 iqtibos
    ABI

  8. Detection of a charge built in the oxide layer of a metal-oxide-semiconductor field-effect transistor by lateral C-V measurement

    A. É. Atamuratov, D. U. Matrasulov, P. K. Khabibullaev

    MaqolaSemiconductor materials and devicesDoklady Physics20074 iqtibos
    ABI

  9. Lateral Capacitance–Voltage Method of NanoMOSFET for Detecting the Hot Carrier Injection

    A. É. Atamuratov, Ahmed Yusupov, Zamira Atamuratova +2

    MaqolaOchiq kirishSemiconductor materials and devicesApplied Sciences20203 iqtibos
    ABI

  10. Characterising lateral capacitance of MNOSFET with localised trapped charge in nitride layer

    A. É. Atamuratov, Zamira Atamuratova, А. Yusupov +1

    MaqolaOchiq kirishSemiconductor materials and devicesResults in Physics20183 iqtibos
    ABI

  11. Anomalous Behavior of Lateral C–V Characteristic of an MNOS Transistor with an Embedded Local Charge in the Nitride Layer

    Zamira Atamuratova, А. Yusupov, B. O. Khalikberdiev +1

    MaqolaSemiconductor materials and devicesTechnical Physics20193 iqtibos
    ABI

  12. The effect of geometrical sizes on efficiency of vertical silicon tunnel junction solar cell for high solar concentration

    A. É. Atamuratov, B.Q. Jumaboyev, А. Yusupov +2

    MaqolaSilicon and Solar Cell Technologies20222 iqtibos
    ABI

  13. The contribution of gate and drain voltages to temperature distribution along the channel in 2D MoS<sub>2</sub> based MOSFET

    A. É. Atamuratov, X. Sh. Saparov, T.A. Atamuratov +2

    MaqolaGraphene research and applications2021 International Conference on Information Science and Communications Technologies (ICISCT)20212 iqtibos
    ABI

  14. Simulation of DIBL effect in junctionless SOI MOSFETs with extended gate

    A. É. Atamuratov, M. M. Khalilloev, A.E. Abdikarimov +4

    MaqolaOchiq kirishAdvancements in Semiconductor Devices and Circuit DesignNanosystems Physics Chemistry Mathematics20172 iqtibos
    ABI

  15. Contribution to the Physical Modelling of Single Charged Defects Causing the Random Telegraph Noise in Junctionless FinFET

    A. É. Atamuratov, M. M. Khalilloev, Ahmed Yusupov +3

    MaqolaOchiq kirishSemiconductor materials and devicesApplied Sciences20202 iqtibos
    ABI

  16. Influence of the field of the built-in oxide charge on the lateral C- V dependence of the MOSFET

    A. É. Atamuratov, D. U. Matrasulov, P. K. Khabibullaev

    MaqolaSemiconductor materials and devicesDoklady Physics20102 iqtibos
    ABI

  17. The Effect of Height on the Efficiency of Vertical Silicon Tunnel Junction Solar Cell for High Solar Concentration

    A. É. Atamuratov, B.Q. Jumaboyev, A.E. Abdikarimov +2

    Maqolasolar cell performance optimization20231 iqtibos
    ABI

  18. Influence of the Gate Oxide and Back Oxide Material Types on Self-heating Effect in Junctionless FinFET

    A. É. Atamuratov, B. O. Jabbarova, M. M. Khalilloev +2

    MaqolaSemiconductor materials and devices20241 iqtibos
    ABI

  19. A Comprehensive Study of the Impact of the Gate Oxide Material Composition on the Self-Heating Effect in Nanosheet Field Effect Transistor

    A. É. Atamuratov, D. R. Rajapov, M. M. Khalilloev +3

    MaqolaAdvancements in Semiconductor Devices and Circuit DesignSilicon20251 iqtibos
    ABI

  20. Surface-dipole contamination of the Schottky-Mott slope: why the Fermi-level pinning factor does not transfer to MXene contacts

    M. M. Khalilloev, A. É. Atamuratov, B O Jabbarova

    MaqolaOchiq kirish20261 iqtibos
    ABI

  21. Combined Influence of Gate Oxide and Back Oxide Materials on Self-Heating and DIBL Effect in 2D MOS2-Based MOSFETs

    A. É. Atamuratov, Khushnudbek Sh. Saparov, Ahmed Yusupov +1

    MaqolaOchiq kirish2D Materials and ApplicationsApplied Sciences20231 iqtibos
    ABI

  22. Supporting data for "Fermi-level pinning at MXene/MoS₂ van der Waals contacts: a first-principles study of eleven terminated and bare MXenes"

    M. M. Khalilloev, A. É. Atamuratov, B. O. Jabbarova

    BoshqaOchiq kirish20260 iqtibos
    ABI

  23. Influence of the Bremsstrahlung on the radiative induction of charge and interface states in MOS transistors

    A. É. Atamuratov, Kh.S. Daliev, S.Z. Zajnabidinov

    MaqolaIntegrated Circuits and Semiconductor Failure AnalysisUzbekiston Fizika Zhurnali19920 iqtibos
    ABI

  24. The influence of Co 60 quanta on current characteristics of rectifier columns on the base of silicon

    G. Aripov, A. É. Atamuratov, U. P. Asatova +2

    MaqolaElectric Power Systems and Control19950 iqtibos
    ABI

  25. Effect of thermal-field treatment and ionizing radiation on the energy spectrum of interfacial states at the Si-SiO2 interface of a MOS transistor

    A. É. Atamuratov, С. З. Зайнабидинов, А. Yusupov +2

    MaqolaSemiconductor materials and devicesTechnical Physics19970 iqtibos
    ABI