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AkademIndex

Xizmatlar

M. M. Khalilloev

26 ta ish

Urganch davlat universiteti

AkademScholarda batafsil koʻrsatkichlar

  1. Self-heating effect in nanoscale SOI Junctionless FinFET with different geometries

    A. É. Atamuratov, B. O. Jabbarova, M. M. Khalilloev +2

    PreprintOchiq kirishAdvancements in Semiconductor Devices and Circuit Design20216 iqtibos
    ABI

  2. The Self-Heating Effect in Junctionless Fin Field-Effect Transistors Based on Silicon-on-Insulator Structures with Different Channel Shapes

    A. É. Atamuratov, B. O. Jabbarova, M. M. Khalilloev +1

    MaqolaAdvancements in Semiconductor Devices and Circuit DesignTechnical Physics Letters20215 iqtibos
    ABI

  3. Optimization of vertically stacked nanosheet FET immune to self-heating

    M. Balasubbareddy, K. Sivasankaran, A. É. Atamuratov +1

    MaqolaSemiconductor materials and devicesMicro and Nanostructures20235 iqtibos
    ABI

  4. Simulation of DIBL effect in 25 nm SOI-FinFET with the different body shapes

    A. É. Atamuratov, A.E. Abdikarimov, M. M. Khalilloev +4

    MaqolaOchiq kirishAdvancements in Semiconductor Devices and Circuit DesignNanosystems Physics Chemistry Mathematics20174 iqtibos
    ABI

  5. The Influence of Fin Shape on the Amplitude of Random Telegraph Noise in the Subthreshold Regime of a Junctionless FinFET

    M. M. Khalilloev, B. O. Jabbarova, Aslan Nasirov

    MaqolaOchiq kirishAdvancements in Semiconductor Devices and Circuit DesignTechnical Physics Letters20192 iqtibos
    ABI

  6. Impact of the channel shape, back oxide and gate oxide layers on self-heating in nanoscale JL FINFET

    A.E. Atamuratov, B.O. Jabbarova, M. M. Khalilloev +3

    MaqolaOchiq kirishSemiconductor materials and devicesNanosystems Physics Chemistry Mathematics20222 iqtibos
    ABI

  7. Simulation of DIBL effect in junctionless SOI MOSFETs with extended gate

    A. É. Atamuratov, M. M. Khalilloev, A.E. Abdikarimov +4

    MaqolaOchiq kirishAdvancements in Semiconductor Devices and Circuit DesignNanosystems Physics Chemistry Mathematics20172 iqtibos
    ABI

  8. Contribution to the Physical Modelling of Single Charged Defects Causing the Random Telegraph Noise in Junctionless FinFET

    A. É. Atamuratov, M. M. Khalilloev, Ahmed Yusupov +3

    MaqolaOchiq kirishSemiconductor materials and devicesApplied Sciences20202 iqtibos
    ABI

  9. Influence of the Gate Oxide and Back Oxide Material Types on Self-heating Effect in Junctionless FinFET

    A. É. Atamuratov, B. O. Jabbarova, M. M. Khalilloev +2

    MaqolaSemiconductor materials and devices20241 iqtibos
    ABI

  10. A Comprehensive Study of the Impact of the Gate Oxide Material Composition on the Self-Heating Effect in Nanosheet Field Effect Transistor

    A. É. Atamuratov, D. R. Rajapov, M. M. Khalilloev +3

    MaqolaAdvancements in Semiconductor Devices and Circuit DesignSilicon20251 iqtibos
    ABI

  11. Surface-dipole contamination of the Schottky-Mott slope: why the Fermi-level pinning factor does not transfer to MXene contacts

    M. M. Khalilloev, A. É. Atamuratov, B O Jabbarova

    MaqolaOchiq kirish20261 iqtibos
    ABI

  12. Supporting data for "Fermi-level pinning at MXene/MoS₂ van der Waals contacts: a first-principles study of eleven terminated and bare MXenes"

    M. M. Khalilloev, A. É. Atamuratov, B. O. Jabbarova

    BoshqaOchiq kirish20260 iqtibos
    ABI

  13. Влияние формы канала на амплитуду случайных телеграфных шумов в подпороговой области беспереходного FinFET-транзистора

    M. M. Khalilloev, Б.О. Жаббарова, А.А. Насиров

    MaqolaOchiq kirish20190 iqtibos
    ABI

  14. Amplitude of Random Telegraph Noise in Junctionless FinFET with Different Channel Shape

    A. É. Atamuratov, M. M. Khalilloev, Ahmed Yusupov +2

    MaqolaOchiq kirishAdvancements in Semiconductor Devices and Circuit Designe-Journal of Surface Science and Nanotechnology20210 iqtibos
    ABI

  15. Эффект саморазогрева в беспереходных вертикальных полевых транзисторах на основе структур "кремний на изоляторе" с различной формой базы

    А.Э. Атамуратов, Б.О. Жаббарова, M. M. Khalilloev +1

    MaqolaOchiq kirish20210 iqtibos
    ABI

  16. Impact of source (drain) doping profiles and channel doping level on self-heating effect in FinFET

    A. É. Atamuratov, B. O. Jabbarova, M. M. Khalilloev +5

    MaqolaOchiq kirishAdvancements in Semiconductor Devices and Circuit DesignMicro and Nanostructures20240 iqtibos
    ABI

  17. Comparative study of the self-heating effect in the accumulation and inversion mode FinFETs

    A. É. Atamuratov, B. O. Jabbarova, E. Sh. Xaitbayev +2

    PreprintOchiq kirish20240 iqtibos
    ABI

  18. Self-heating-induced junctionless stacked nanosheet FET RF stability performance degradation analysis and optimization

    M. Balasubbareddy, K. Sivasankaran, A. É. Atamuratov +1

    MaqolaSemiconductor materials and devicesJournal of Computational Electronics20250 iqtibos
    ABI

  19. Impacts of Local Oxide Trapped Charge on Electrical and Capacitance Characteristics of SOI FinFet

    A. É. Atamuratov, И. Н. Каримов, Mirzabahrom Foziljonov +3

    MaqolaOchiq kirishSemiconductor materials and devicesEast European Journal of Physics20250 iqtibos
    ABI

  20. Effect of Gate Oxide and Back Oxide Materials on Self-Heating Effect in FinFET

    M. M. Khalilloev, B. O. Jabbarova, F. Eshchanov +1

    MaqolaOchiq kirishSemiconductor materials and devicesEast European Journal of Physics20250 iqtibos
    ABI

  21. Comprehensive Numerical Modeling of Silicon Tunnel Junction for Application in Multijunction Monolithic Solar Cells

    A. É. Atamuratov, B. Q. Jumaboev, M. M. Khalilloev +3

    PreprintOchiq kirishSemiconductor Quantum Structures and DevicesResearch Square20250 iqtibos
    ABI

  22. First-Principles Investigation of The Electronic Properties of Monolayer MoS₂ Using DFT-Based QuantumATK Simulations

    M. M. Khalilloev, B. O. Jabbarova, Asrorbek Hasanov +2

    MaqolaOchiq kirish2D Materials and ApplicationsEast European Journal of Physics20260 iqtibos
    ABI

  23. Work-function transferability in asymmetric MXene slabs: the role of the carbide core

    M. M. Khalilloev, B. O. Jabbarova

    BoshqaOchiq kirish20260 iqtibos
    ABI

  24. Work-function transferability in asymmetric MXene slabs: the role of the carbide core

    M. M. Khalilloev, B. O. Jabbarova

    Boshqa20260 iqtibos
    ABI

  25. Data and code for: Surface-dipole contamination of the Schottky–Mott slope: why the Fermi-level pinning factor does not transfer to MXene contacts

    M. M. Khalilloev, A. É. Atamuratov, B. O. Jabbarova

    BoshqaOchiq kirish20260 iqtibos
    ABI