A.E. Abdikarimov

13 ta ish

Urganch davlat universiteti

1. The Effect of the Fin Shape and Thickness of the Buried Oxide on the DIBL Effect in an SOI FinFET

   A.E. Abdikarimov, А. Yusupov, A. É. Atamuratov

   MaqolaSemiconductor materials and devicesTechnical Physics Letters20186 iqtibos

   ABIABI:AkademIndex/2026.other.397915

2. Influence of device geometry on electrical characteristics of a 10.7 nm SOI-FinFET

   A.E. Abdikarimov, Guillermo Indalecio, Enrique Comesaña +4

   MaqolaAdvancements in Semiconductor Devices and Circuit Design20145 iqtibos

   ABIABI:AkademIndex/2026.other.386764

3. Simulation of DIBL effect in 25 nm SOI-FinFET with the different body shapes

   A. É. Atamuratov, A.E. Abdikarimov, M. M. Khalilloev +4

   MaqolaOAOchiq kirishAdvancements in Semiconductor Devices and Circuit DesignNanosystems Physics Chemistry Mathematics20174 iqtibos

   ABIABI:AkademIndex/2017.article.000161

4. The effect of geometrical sizes on efficiency of vertical silicon tunnel junction solar cell for high solar concentration

   A. É. Atamuratov, B.Q. Jumaboyev, А. Yusupov +2

   MaqolaSilicon and Solar Cell Technologies20222 iqtibos

   ABIABI:AkademIndex/2022.article.001344

5. Simulation of DIBL effect in junctionless SOI MOSFETs with extended gate

   A. É. Atamuratov, M. M. Khalilloev, A.E. Abdikarimov +4

   MaqolaOAOchiq kirishAdvancements in Semiconductor Devices and Circuit DesignNanosystems Physics Chemistry Mathematics20172 iqtibos

   ABIABI:AkademIndex/2026.other.541483

6. The Influence of a Single Charged Interface Trap on the Subthreshold Drain Current in FinFETs with Different Fin Shapes

   A.E. Abdikarimov

   MaqolaAdvancements in Semiconductor Devices and Circuit DesignTechnical Physics Letters20201 iqtibos

   ABIABI:AkademIndex/2020.article.001438

7. The Effect of Height on the Efficiency of Vertical Silicon Tunnel Junction Solar Cell for High Solar Concentration

   A. É. Atamuratov, B.Q. Jumaboyev, A.E. Abdikarimov +2

   Maqolasolar cell performance optimization20231 iqtibos

   ABIABI:AkademIndex/2023.article.003350

8. Temperature-dependent dark I–V transport and barrier inhomogeneity in VTE-grown CdTe/Si heterojunction

   I.B. Sapaev, S.O. Sadullaev, Kh. N. Juraev +4

   MaqolaOAOchiq kirishSemiconductor materials and interfacesResults in Physics20261 iqtibos

   ABIABI:AkademIndex/2026.article.006836

9. Memristors: types, characteristics and prospects of use as the main element of the future artificial intelligence

   А. Yusupov, A. É. Atamuratov, A.E. Abdikarimov +5

   MaqolaAdvanced Memory and Neural Computing20220 iqtibos

   ABIABI:AkademIndex/2022.article.011219

10. Capacitance-Voltage Method for Detecting the local oxide trapped charge in SOI FinFET

    A.E. Abdikarimov, Mirzabahrom Foziljonov, И. Н. Каримов

    MaqolaSemiconductor materials and devices20220 iqtibos

    ABIABI:AkademIndex/2022.article.011220

11. Electric conductivity of cotton and its dependence on fiber quality

    A.E. Abdikarimov, Khurshid Bozorov, О. О. Маматкаримов +1

    MaqolaTextile materials and evaluationsAIP conference proceedings20250 iqtibos

    ABIABI:AkademIndex/2025.article.007414

12. Impacts of Local Oxide Trapped Charge on Electrical and Capacitance Characteristics of SOI FinFet

    A. É. Atamuratov, И. Н. Каримов, Mirzabahrom Foziljonov +3

    MaqolaOAOchiq kirishSemiconductor materials and devicesEast European Journal of Physics20250 iqtibos

    ABIABI:AkademIndex/2025.article.009018

13. Impact of the gate oxide material composition on the self-heating and short channel effects in nanosheet field effect transistor

    A.E. Atamuratov, D. R. Rajapov, M. M. Khalilloev +2

    PreprintOAOchiq kirishAdvancements in Semiconductor Devices and Circuit DesignResearch Square20260 iqtibos

    ABIABI:AkademIndex/2026.preprint.001199