Эффект саморазогрева в беспереходных вертикальных полевых транзисторах на основе структур "кремний на изоляторе" с различной формой базы

In this work it is simulated the self-heating effect in nanoscale Silicon on Insulator Junctionless FinFET transistor with fin cross section in rectangular, trapeze and triangle form. It is shown that for considered transistor structure the lattice temperature in the middle of the channel is lower than at lateral sides, near source and drain. Besides it at the same conditions the lattice temperature depends on shape of channel cross section too.

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