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14 ta ish

Ish: Эффект саморазогрева в беспереходных вертикальных полевых транзисторах на основе структур "кремний на изоляторе" с различной формой базы

  1. Multigate transistors as the future of classical metal–oxide–semiconductor field-effect transistors

    Isabelle Ferain, Cynthia A. Colinge, Jean-Pierre Colinge

    Maqola201112 iqtibos
    ABI

  2. Scaling of Trigate Junctionless Nanowire MOSFET With Gate Length Down to 13 nm

    Sylvain Barraud, Matthieu Berthomé, R. Coquand +7

    Maqola20127 iqtibos
    ABI

  3. Implementation of the Density Gradient Quantum Corrections for 3-D Simulations of Multigate Nanoscaled Transistors

    Antonio J. García‐Loureiro, Natalia Seoane, M. Aldegunde +4

    Maqola20117 iqtibos
    ABI

  4. Impact of self-heating effect on the performance of hybrid FinFET

    Rajeev Pankaj Nelapati, K. Sivasankaran

    Maqola20186 iqtibos
    ABI

  5. Large random telegraph noise in sub-threshold operation of nano-scale nMOSFETs

    J. P. Campbell, Lihua Yu, Kin P. Cheung +4

    Maqola20096 iqtibos
    ABI

  6. Influence of device geometry on electrical characteristics of a 10.7 nm SOI-FinFET

    A.E. Abdikarimov, Guillermo Indalecio, Enrique Comesaña +4

    MaqolaAdvancements in Semiconductor Devices and Circuit Design20145 iqtibos
    ABI

  7. Integrated modeling of Self-heating of confined geometry (FinFET, NWFET, and NSHFET) transistors and its implications for the reliability of sub-20 nm modern integrated circuits

    Woojin Ahn, SangHoon Shin, Chang‐Ming Jiang +3

    Maqola20185 iqtibos
    ABI

  8. Self-Consistent Simulation of Heating Effects in Nanoscale Devices

    Dragica Vasileska, Stephen M. Goodnick, Katerina Raleva

    Maqola20094 iqtibos
    ABI

  9. Multi-gate SOI MOSFETs

    J.-P. Colinge

    Maqola20073 iqtibos
    ABI

  10. Role of non-uniform channel doping in improving the nanoscale JL DG MOSFET reliability against the self-heating effects

    H. Ferhati, Fouzi Douak, F. Djeffal

    Maqola20173 iqtibos
    ABI

  11. Reduction of self-heating effect using selective buried oxide (SELBOX) charge plasma based junctionless transistor

    Amrish Kumar, Abhinav Gupta, Sanjeev Rai

    Maqola20183 iqtibos
    ABI

  12. Numerical study on the self-heating effects for vacuum/high-k gate dielectric tri-gate FinFETs

    Guohe Zhang, Junhua Lai, Shengli Zhu +3

    Maqola20193 iqtibos
    ABI

  13. Sarlavhasiz

    Boshqa2 iqtibos
    ABI

  14. Влияние формы плавника и толщины скрытого оксидного слоя на DIBL-эффект в FinFET-транзисторе, изготовленном по технологии "кремний на изоляторе"

    А.Э. Абдикаримов, А. Юсупов, А.Э. Атамуратов

    MaqolaOchiq kirish20181 iqtibos
    ABI