Antonio J. García‐Loureiro

7 ta ish

University of Santiago de Compostela

1. Implementation of the Density Gradient Quantum Corrections for 3-D Simulations of Multigate Nanoscaled Transistors

   Antonio J. García‐Loureiro, Natalia Seoane, M. Aldegunde +4

   Maqola20117 iqtibos

   ABIABI:AkademIndex/2026.other.397911

2. Influence of device geometry on electrical characteristics of a 10.7 nm SOI-FinFET

   A.E. Abdikarimov, Guillermo Indalecio, Enrique Comesaña +4

   MaqolaAdvancements in Semiconductor Devices and Circuit Design20145 iqtibos

   ABIABI:AkademIndex/2026.other.386764

3. Simulation of DIBL effect in 25 nm SOI-FinFET with the different body shapes

   A. É. Atamuratov, A.E. Abdikarimov, M. M. Khalilloev +4

   MaqolaOAOchiq kirishAdvancements in Semiconductor Devices and Circuit DesignNanosystems Physics Chemistry Mathematics20174 iqtibos

   ABIABI:AkademIndex/2017.article.000161

4. The effect of geometrical sizes on efficiency of vertical silicon tunnel junction solar cell for high solar concentration

   A. É. Atamuratov, B.Q. Jumaboyev, А. Yusupov +2

   MaqolaSilicon and Solar Cell Technologies20222 iqtibos

   ABIABI:AkademIndex/2022.article.001344

5. Contribution to the Physical Modelling of Single Charged Defects Causing the Random Telegraph Noise in Junctionless FinFET

   A. É. Atamuratov, M. M. Khalilloev, Ahmed Yusupov +3

   MaqolaOAOchiq kirishSemiconductor materials and devicesApplied Sciences20202 iqtibos

   ABIABI:AkademIndex/2026.other.541488

6. Numerical optimisation and recombination effects on the vertical-tunnel-junction (VTJ) GaAs solar cell up to 10,000 suns

   Celia Outes, Eduardo F. Férnández, Natalia Seoane +2

   Maqola20202 iqtibos

   ABIABI:AkademIndex/2026.other.549353

7. Vertical-tunnel-junction (VTJ) solar cell for ultra-high light concentrations (>2000 suns)

   Eduardo F. Férnández, Natalia Seoane, Florencia Almonacid +1

   Maqola20182 iqtibos

   ABIABI:AkademIndex/2026.other.584350