Natalia Seoane

4 ta ish

Swansea University

1. Implementation of the Density Gradient Quantum Corrections for 3-D Simulations of Multigate Nanoscaled Transistors

   Antonio J. García‐Loureiro, Natalia Seoane, M. Aldegunde +4

   Maqola20117 iqtibos

   ABIABI:AkademIndex/2026.other.397911

2. Influence of device geometry on electrical characteristics of a 10.7 nm SOI-FinFET

   A.E. Abdikarimov, Guillermo Indalecio, Enrique Comesaña +4

   MaqolaAdvancements in Semiconductor Devices and Circuit Design20145 iqtibos

   ABIABI:AkademIndex/2026.other.386764

3. Numerical optimisation and recombination effects on the vertical-tunnel-junction (VTJ) GaAs solar cell up to 10,000 suns

   Celia Outes, Eduardo F. Férnández, Natalia Seoane +2

   Maqola20202 iqtibos

   ABIABI:AkademIndex/2026.other.549353

4. Vertical-tunnel-junction (VTJ) solar cell for ultra-high light concentrations (>2000 suns)

   Eduardo F. Férnández, Natalia Seoane, Florencia Almonacid +1

   Maqola20182 iqtibos

   ABIABI:AkademIndex/2026.other.584350