K. Sivasankaran

6 ta ish

Vellore Institute of Technology University

1. Optimization of vertically stacked nanosheet FET immune to self-heating

   M. Balasubbareddy, K. Sivasankaran, A. É. Atamuratov +1

   MaqolaSemiconductor materials and devicesMicro and Nanostructures20235 iqtibos

   ABIABI:AkademIndex/2023.article.001165

2. Impact of the channel shape, back oxide and gate oxide layers on self-heating in nanoscale JL FINFET

   A.E. Atamuratov, B.O. Jabbarova, M. M. Khalilloev +3

   MaqolaOAOchiq kirishSemiconductor materials and devicesNanosystems Physics Chemistry Mathematics20222 iqtibos

   ABIABI:AkademIndex/2026.other.511885

3. Influence of the Gate Oxide and Back Oxide Material Types on Self-heating Effect in Junctionless FinFET

   A. É. Atamuratov, B. O. Jabbarova, M. M. Khalilloev +2

   MaqolaSemiconductor materials and devices20241 iqtibos

   ABIABI:AkademIndex/2024.article.001950

4. A Comprehensive Study of the Impact of the Gate Oxide Material Composition on the Self-Heating Effect in Nanosheet Field Effect Transistor

   A. É. Atamuratov, D. R. Rajapov, M. M. Khalilloev +3

   MaqolaAdvancements in Semiconductor Devices and Circuit DesignSilicon20251 iqtibos

   ABIABI:AkademIndex/2025.article.001842

5. Self-heating-induced junctionless stacked nanosheet FET RF stability performance degradation analysis and optimization

   M. Balasubbareddy, K. Sivasankaran, A. É. Atamuratov +1

   MaqolaSemiconductor materials and devicesJournal of Computational Electronics20250 iqtibos

   ABIABI:AkademIndex/2025.article.007736

6. Impact of the gate oxide material composition on the self-heating and short channel effects in nanosheet field effect transistor

   A.E. Atamuratov, D. R. Rajapov, M. M. Khalilloev +2

   PreprintOAOchiq kirishAdvancements in Semiconductor Devices and Circuit DesignResearch Square20260 iqtibos

   ABIABI:AkademIndex/2026.preprint.001199