B. O. Jabbarova

13 ta ish

Urganch davlat universiteti

1. Linearized KdV equation on a metric graph

   Z. A. Sobirov, Maqsad. I. Akhmedov, O.V. Karpova +1

   MaqolaOAOchiq kirishAdvanced Mathematical Physics ProblemsNanosystems Physics Chemistry Mathematics20157 iqtibos

   ABIABI:AkademIndex/2015.article.000199

2. Self-heating effect in nanoscale SOI Junctionless FinFET with different geometries

   A. É. Atamuratov, B. O. Jabbarova, M. M. Khalilloev +2

   PreprintOAOchiq kirishAdvancements in Semiconductor Devices and Circuit Design20216 iqtibos

   ABIABI:AkademIndex/2021.preprint.000003

3. The Self-Heating Effect in Junctionless Fin Field-Effect Transistors Based on Silicon-on-Insulator Structures with Different Channel Shapes

   A. É. Atamuratov, B. O. Jabbarova, M. M. Khalilloev +1

   MaqolaAdvancements in Semiconductor Devices and Circuit DesignTechnical Physics Letters20215 iqtibos

   ABIABI:AkademIndex/2021.article.000827

4. The Influence of Fin Shape on the Amplitude of Random Telegraph Noise in the Subthreshold Regime of a Junctionless FinFET

   M. M. Khalilloev, B. O. Jabbarova, Aslan Nasirov

   MaqolaOAOchiq kirishAdvancements in Semiconductor Devices and Circuit DesignTechnical Physics Letters20192 iqtibos

   ABIABI:AkademIndex/2019.article.000603

5. Influence of the Gate Oxide and Back Oxide Material Types on Self-heating Effect in Junctionless FinFET

   A. É. Atamuratov, B. O. Jabbarova, M. M. Khalilloev +2

   MaqolaSemiconductor materials and devices20241 iqtibos

   ABIABI:AkademIndex/2024.article.001950

6. Supporting data for "Fermi-level pinning at MXene/MoS₂ van der Waals contacts: a first-principles study of eleven terminated and bare MXenes"

   M. M. Khalilloev, A. É. Atamuratov, B. O. Jabbarova

   BoshqaOAOchiq kirish20260 iqtibos

   ABIABI:AkademIndex/2026.other.hsg4gt3q

7. Impact of source (drain) doping profiles and channel doping level on self-heating effect in FinFET

   A. É. Atamuratov, B. O. Jabbarova, M. M. Khalilloev +5

   MaqolaOAOchiq kirishAdvancements in Semiconductor Devices and Circuit DesignMicro and Nanostructures20240 iqtibos

   ABIABI:AkademIndex/2024.article.002170

8. Comparative study of the self-heating effect in the accumulation and inversion mode FinFETs

   A. É. Atamuratov, B. O. Jabbarova, E. Sh. Xaitbayev +2

   PreprintOAOchiq kirish20240 iqtibos

   ABIABI:AkademIndex/2024.preprint.000307

9. Effect of Gate Oxide and Back Oxide Materials on Self-Heating Effect in FinFET

   M. M. Khalilloev, B. O. Jabbarova, F. Eshchanov +1

   MaqolaOAOchiq kirishSemiconductor materials and devicesEast European Journal of Physics20250 iqtibos

   ABIABI:AkademIndex/2025.article.009026

10. First-Principles Investigation of The Electronic Properties of Monolayer MoS₂ Using DFT-Based QuantumATK Simulations

    M. M. Khalilloev, B. O. Jabbarova, Asrorbek Hasanov +2

    MaqolaOAOchiq kirish2D Materials and ApplicationsEast European Journal of Physics20260 iqtibos

    ABIABI:AkademIndex/2026.article.011382

11. Work-function transferability in asymmetric MXene slabs: the role of the carbide core

    M. M. Khalilloev, B. O. Jabbarova

    BoshqaOAOchiq kirish20260 iqtibos

    ABIABI:AkademIndex/2026.other.1031416

12. Work-function transferability in asymmetric MXene slabs: the role of the carbide core

    M. M. Khalilloev, B. O. Jabbarova

    Boshqa20260 iqtibos

    ABIABI:AkademIndex/2026.other.1031720

13. Data and code for: Surface-dipole contamination of the Schottky–Mott slope: why the Fermi-level pinning factor does not transfer to MXene contacts

    M. M. Khalilloev, A. É. Atamuratov, B. O. Jabbarova

    BoshqaOAOchiq kirish20260 iqtibos

    ABIABI:AkademIndex/2026.other.1127156