Maqola

Effect of thermal-field treatment and ionizing radiation on the energy spectrum of interfacial states at the Si-SiO2 interface of a MOS transistor

A. É. AtamuratovUgrench State University (Al-Khorezmi), 740000, Ugrench, UzbekistanС. З. ЗайнабидиновUgrench State University (Al-Khorezmi), 740000, Ugrench, UzbekistanА. YusupovUgrench State University (Al-Khorezmi), 740000, Ugrench, UzbekistanKh.S. DalievUgrench State University (Al-Khorezmi), 740000, Ugrench, UzbekistanK. M. AdinaevUgrench State University (Al-Khorezmi), 740000, Ugrench, Uzbekistan

Technical Physicsjournal1997en

Ochiq kirish: yoʻq

ABI

Annotatsiya

Annotatsiya mavjud emas.

Mavzular

Semiconductor materials and devices Integrated Circuits and Semiconductor Failure Analysis Semiconductor materials and interfaces

Identifikatorlar

DOI: 10.1134/1.1258904

Iqtiboslar va manbalar

0 ta iqtibos5 ta foydalanilgan manba