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Integrated Circuits and Semiconductor Failure Analysis

142 ta ish

  1. Effect of Ar+-ion bombardment on the composition and structure of the surface of CoSi2/Si(111) nanofilms

    S. B. Donaev, A. K. Tashatov, Б. Е. Умирзаков

    MaqolaIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques201523 iqtibos
    ABI

  2. Investigation of Angular Spectrum of Scattered Inert Gas Ions from the InGaP (001) Surface

    М. K. Kаrimov, Uchkun Kutliev, S.B. Bobojonova +1

    MaqolaOchiq kirishIon-surface interactions and analysisPhysics and Chemistry of Solid State202113 iqtibos
    ABI

  3. Features of polyatomic ion emission under sputtering of a silicon single crystal by Au− cluster ions

    Sh.Dj. Akhunov, С. Н. Морозов, У. Х. Расулев

    MaqolaIon-surface interactions and analysisNuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms200313 iqtibos
    ABI

  4. Effect of thermal and laser annealing on the atom distribution profiles in Si(111) implanted with P+ and B+ ions

    А.С. Рысбаев, J. B. Khujaniyozov, I. R. Bekpulatov +2

    MaqolaIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques201712 iqtibos
    ABI

  5. Influence of Linear Doping Profiles on the Electrophysical Features of p-n Junctions

    Jo`shqin Abdullayev

    MaqolaOchiq kirishAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics202512 iqtibos
    ABI

  6. Thermal spikes observed during the tantalum sputtering by gold cluster ions

    С. Н. Морозов, У. Х. Расулев

    MaqolaIon-surface interactions and analysisTechnical Physics Letters200312 iqtibos
    ABI

  7. Comparative study of polyatomic secondary ion emission from silicon with <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si11.gif" overflow="scroll"><mml:mrow><mml:msubsup><mml:mrow><mml:mtext>Au</mml:mtext></mml:mrow><mml:mrow><mml:mi>m</mml:mi></mml:mrow><mml:mrow><mml:mo>-</mml:mo></mml:mrow></mml:msubsup></mml:mrow></mml:math>, <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si12.gif" overflow="scroll"><mml:mrow><mml:msubsup><mml:mrow><mml:mtext>Si</mml:mtext></mml:mrow><mml:mrow><mml:mi>m</mml:mi></mml:mrow><mml:mrow><mml:mo>-</mml:mo></mml:mrow></mml:msubsup></mml:mrow></mml:math> and <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si13.gif" overflow="scroll"><mml:mrow><mml:msubsup><mml:mrow><mml:mtext>C</mml:mtext></mml:mrow><mml:mrow><mml:mi>m</mml:mi></mml:mrow><mml:mrow><mml:mo>-</mml:mo></mml:mrow></mml:msubsup></mml:mrow></mml:math> projectiles

    С. Н. Морозов, У. Х. Расулев

    MaqolaIon-surface interactions and analysisNuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms200611 iqtibos
    ABI

  8. Mathematical Analysis of the Features of Radial p-n Junction: Influence of Temperature and Concentration

    Jo`shqin Abdullayev, I. B. Sapaev, N.Sh. Esanmuradova +2

    MaqolaOchiq kirishAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics202510 iqtibos
    ABI

  9. High non-additive sputtering of silicon as large positive cluster ions under polyatomic ion bombardment

    S.F. Belykh, У. Х. Расулев, A.V. Samartsev +2

    MaqolaIon-surface interactions and analysisVacuum20009 iqtibos
    ABI

  10. Structural and some electrophysical properties of the solid solutions Si1 − x Sn x (0 ≤ x ≤ 0.04)

    A.S. Saidov, Sh. N. Usmonov, M. U. Kalanov +2

    MaqolaAdvanced Surface Polishing TechniquesPhysics of the Solid State20138 iqtibos
    ABI

  11. Variation of the Crystal Structure on Si(111) Surface Induced by Ion Bombardment and Subsequent Annealing

    Samad Nimatov, Б. Е. Умирзаков, F. Ya. Khudaikulov +1

    MaqolaIon-surface interactions and analysisTechnical Physics20198 iqtibos
    ABI

  12. Investigation of Defect InP(001) Surface by Low Energy Ion Scаttering Spectroscopy

    М. K. Kаrimov, F.O. Kuryozov, Sh.R. Sadullaev +2

    MaqolaIntegrated Circuits and Semiconductor Failure AnalysisMaterials science forum20228 iqtibos
    ABI

  13. Exclusion Effect in Semiconductors with Non-Injecting Contacts

    D. A. Aronov, P. I. Knigin, Yu. S. Korolev +1

    MaqolaSilicon and Solar Cell Technologiesphysica status solidi (a)19847 iqtibos
    ABI

  14. Double-injection currents in Zn-compensated silicon pin structures

    P. M. Karageorgy‐Alkalaev, I. Z. Karimova, P. I. Knigin +1

    MaqolaSilicon and Solar Cell Technologiesphysica status solidi (a)19767 iqtibos
    ABI

  15. Investigation of the dose dependence of the amorphization of a Si(111) surface bombarded with low-energy Na+ ions

    S. J. Nimatov, Д. С. Руми

    MaqolaIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20146 iqtibos
    ABI

  16. The Effect of the Fin Shape and Thickness of the Buried Oxide on the DIBL Effect in an SOI FinFET

    A.E. Abdikarimov, А. Yusupov, A. É. Atamuratov

    MaqolaSemiconductor materials and devicesTechnical Physics Letters20186 iqtibos
    ABI

  17. Non-linear effects in Ta sputtering by Au− ions

    С. Н. Морозов, У. Х. Расулев

    MaqolaIon-surface interactions and analysisNuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms20036 iqtibos
    ABI

  18. Electron Microscopy and Elemental Composition of the Near-Surface Layer of Electron-Irradiated LiF Crystals

    M. A. Mussaeva, Э. М. Ибрагимова

    MaqolaIon-surface interactions and analysisTechnical Physics Letters20195 iqtibos
    ABI

  19. Statistics of Inter‐Impurity Recombination of Electrons and Holes in Semiconductors

    P. M. Karageorgy‐Alkalaev, A. Yu. Leĭderman

    MaqolaSilicon and Solar Cell Technologiesphysica status solidi (b)19685 iqtibos
    ABI

  20. On the theory of double injection in semiconductors with continuous distribution of trapping levels within the Gap

    A. Yu. Leĭderman

    MaqolaSilicon and Solar Cell Technologiesphysica status solidi (a)19794 iqtibos
    ABI

  21. Distinctive Features of the Temperature Sensitivity of a Transistor Structure in a Bipolar Mode of Measurement

    A. V. Karimov, D. P. Dzhuraev, Sh. M. Kuliev +1

    MaqolaSemiconductor materials and interfacesJournal of Engineering Physics and Thermophysics20164 iqtibos
    ABI

  22. Simulation of DIBL effect in 25 nm SOI-FinFET with the different body shapes

    A. É. Atamuratov, A.E. Abdikarimov, M. M. Khalilloev +4

    MaqolaOchiq kirishAdvancements in Semiconductor Devices and Circuit DesignNanosystems Physics Chemistry Mathematics20174 iqtibos
    ABI

  23. Methods of Determining Reference Signals for One and Multichannel Signatural Analyzer of Microprocessor Systems

    Rustam Xusanovich Djuraev

    MaqolaOchiq kirishVLSI and Analog Circuit TestingCommunications20184 iqtibos
    ABI

  24. Development of simulation model of smart phase selector device

    E. Khojiakbar, I.Kh. Kholiddinov, Asrorbek Eraliev +2

    MaqolaOchiq kirishVLSI and Analog Circuit TestingE3S Web of Conferences20234 iqtibos
    ABI

  25. Negative secondary ion mass spectra under Cs+ ion bombardment of the p-SiC-〈B〉-surface

    I. G. Atabaev, Timur Saliev, Б.Г. Атабаев +1

    MaqolaIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20114 iqtibos
    ABI