Effect of Ar+-ion bombardment on the composition and structure of the surface of CoSi2/Si(111) nanofilms
S. B. DonaevTashkent State Technical University, Tashkent, 100095, UzbekistanA. K. TashatovTashkent State Technical University, Tashkent, 100095, UzbekistanБ. Е. УмирзаковTashkent State Technical University, Tashkent, 100095, Uzbekistan
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ABI
Annotatsiya
The effect of Ar+-ion bombardment on the surface composition and structure of CoSi2/Si nano-films is studied. It is demonstrated that ion bombardment leads to the decomposition of CoSi2 and enrichment of the film surface with Si atoms. After heating at T = 850–900 K, the Si-CoSi2-Si nanofilm system forms.
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