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Xizmatlar

A. K. Tashatov

20 ta ish

Qarshi Davlat Universiteti

AkademScholarda batafsil koʻrsatkichlar

  1. Effect of Ar+-ion bombardment on the composition and structure of the surface of CoSi2/Si(111) nanofilms

    S. B. Donaev, A. K. Tashatov, Б. Е. Умирзаков

    MaqolaIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques201523 iqtibos
    ABI

  2. Analysis of the structure and properties of heterostructured nanofilms prepared by epitaxy and ion implantation methods

    Б. Е. Умирзаков, Д. А. Ташмухамедова, М. К. Рузибаева +3

    MaqolaMetal and Thin Film MechanicsTechnical Physics201315 iqtibos
    ABI

  3. On new two-dimensional structures produced on the Si (111) and Si (100) surface upon molecular-beam epitaxy of cobalt and silicon

    А.С. Рысбаев, A. K. Tashatov, Sh. X. Dzhuraev +3

    MaqolaSurface and Thin Film PhenomenaJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques201113 iqtibos
    ABI

  4. Study of the Influence of Implanted Atoms on the Coefficients of the Sputtering of Silicon and Silicon with a Thin Oxide Film

    Д. А. Ташмухамедова, M. B. Yusupjanova, A. K. Tashatov +1

    MaqolaIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20185 iqtibos
    ABI

  5. Surface Morphology of NiSi2/Si Films Obtained by the Method of Solid-Phase Deposition

    A. K. Tashatov, N. M. Mustafoyeva

    MaqolaSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20204 iqtibos
    ABI

  6. Effect of the Disordering of Thin Surface Layers on the Electronic and Optical Properties of Si(111)

    Б. Е. Умирзаков, Д. А. Ташмухамедова, A. K. Tashatov +2

    MaqolaSemiconductor materials and interfacesSemiconductors20204 iqtibos
    ABI

  7. Theoretical Explanation of the Effect of a Decrease in the Si(111) Plasmon Energy during the Implantation of Ions with a Large Dose

    А.С. Рысбаев, J. B. Khujaniyozov, M.T. Normuradov +3

    MaqolaIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20203 iqtibos
    ABI

  8. Electronic and Optical Properties of NiSi2/Si Nanofilms

    Б. Е. Умирзаков, Д. А. Ташмухамедова, A. K. Tashatov +1

    MaqolaSurface and Thin Film PhenomenaTechnical Physics20193 iqtibos
    ABI

  9. Comparison of parameters of heteroepitaxial structures

    A. K. Tashatov, Rumiya Beytullayeva, T T Ungbayevich +2

    MaqolaOchiq kirishSilicon and Solar Cell TechnologiesIOP Conference Series Materials Science and Engineering20201 iqtibos
    ABI

  10. High-Sensitivity Temperature Sensor on the Basis of Single-Crystal Si(111) Implanted from Multiple Directions with P+ and B+ Ions

    А.С. Рысбаев, M. T. Normurodov, A.M. Rakhimov +2

    MaqolaIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20201 iqtibos
    ABI

  11. The influence of laser annealing on the surface state of ion doped silicon

    I.N. Kodirov, A. K. Tashatov, Б. Е. Умирзаков +1

    MaqolaLaser Material Processing Techniques19950 iqtibos
    ABI

  12. Low energy electron and photoelectron spectroscopy of Si(111) surface implanted by P + and B + ions

    А.С. Рысбаев, A. K. Tashatov

    MaqolaElectron and X-Ray Spectroscopy Techniques19990 iqtibos
    ABI

  13. Modification of structure and properties of semiconductor surface by ion implantation with active metals

    А.С. Рысбаев, Sh.H. Djuraev, A.M. Rahimov +2

    MaqolaMetal and Thin Film MechanicsUzbekiston Fizika Zhurnali20000 iqtibos
    ABI

  14. Application of low energy ion implantation to the creation of contacts to ultrathin films

    A. K. Tashatov

    MaqolaMetal and Thin Film Mechanics20010 iqtibos
    ABI

  15. On the Band-Gap Width of NiSi2 Nanocrystals Created in the Surface Region of Si Using Ion Implantation

    N. M. Mustafoeva, A. K. Tashatov, Б. Е. Умирзаков

    MaqolaSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20230 iqtibos
    ABI

  16. Effect of $${\text{O}}_{2}^{ + }$$ Ion Implantation on the Elemental and Chemical Composition of the Si(111) Surface

    G. Kh. Allayarova, Б. Е. Умирзаков, A. K. Tashatov

    MaqolaIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20240 iqtibos
    ABI

  17. Effect of О<sub>2</sub><sup>+</sup> Ion Implantation on the Elemental and Chemical Composition of the Si(111) Surface

    G. Kh. Allayarova, Б. Е. Умирзаков, A. K. Tashatov

    MaqolaOchiq kirishIon-surface interactions and analysisПоверхность Рентгеновские синхротронные и нейтронные исследования20240 iqtibos
    ABI

  18. On Si/NiSi2/Si(111) Heterostructures Obtained by Solid-Phase Deposition

    N. M. Mustafoeva, A. K. Tashatov, Б. Е. Умирзаков +1

    MaqolaSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20240 iqtibos
    ABI

  19. STUDY OF THE EFFECT OF Ni⁺ ION IMPLANTATION ON THE NEAR-SURFACE LAYERS OF SILICON USING MODERN ANALYSIS METHODS

    N. M. Mustafoeva, A. K. Tashatov, Bünyamin Şahin

    BoshqaOchiq kirishZenodo (CERN European Organization for Nuclear Research)20260 iqtibos
    ABI

  20. STUDY OF THE EFFECT OF Ni⁺ ION IMPLANTATION ON THE NEAR-SURFACE LAYERS OF SILICON USING MODERN ANALYSIS METHODS

    N. M. Mustafoeva, A. K. Tashatov, Bünyamin Şahin

    BoshqaZenodo (CERN European Organization for Nuclear Research)20260 iqtibos
    ABI