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Xizmatlar

А.С. Рысбаев

21 ta ish

Qarshi Davlat Universiteti

AkademScholarda batafsil koʻrsatkichlar

  1. The Influence of Structural Defects in Silicon on the Formation of Photosensitive Mn4Si7–Si❬Mn❭–Mn4Si7 and Mn4Si7–Si❬Mn❭–M Heterostructures

    T. S. Kamilov, А.С. Рысбаев, V. V. Klechkovskaya +3

    MaqolaSemiconductor materials and interfacesApplied Solar Energy201921 iqtibos
    ABI

  2. Formation and Electronic Structure of Barium-Monosilicide- and Barium-Disilicide Films

    M. T. Normurodov, А.С. Рысбаев, I. R. Bekpulatov +2

    MaqolaSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques202117 iqtibos
    ABI

  3. Formation of nanosize silicides films on the Si(111) and Si(100) surfaces by low-energy ion implantation

    А.С. Рысбаев, Zh. B. Khuzhaniyazov, A.M. Rakhimov +1

    MaqolaSemiconductor materials and interfacesTechnical Physics201415 iqtibos
    ABI

  4. On new two-dimensional structures produced on the Si (111) and Si (100) surface upon molecular-beam epitaxy of cobalt and silicon

    А.С. Рысбаев, A. K. Tashatov, Sh. X. Dzhuraev +3

    MaqolaSurface and Thin Film PhenomenaJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques201113 iqtibos
    ABI

  5. Effect of thermal and laser annealing on the atom distribution profiles in Si(111) implanted with P+ and B+ ions

    А.С. Рысбаев, J. B. Khujaniyozov, I. R. Bekpulatov +2

    MaqolaIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques201712 iqtibos
    ABI

  6. Variations in the electronic structure of the silicon near-surface region during implantation of phosphorus and boron ions

    M.T. Normuradov, A. K. Tashatov, А.С. Рысбаев +4

    Maqola200711 iqtibos
    ABI

  7. Peculiarities of the electron structure of nanosized ion-implanted layers in silicon

    А.С. Рысбаев, Zh. B. Khuzhaniyazov, M.T. Normuradov +2

    MaqolaSemiconductor materials and interfacesTechnical Physics20149 iqtibos
    ABI

  8. Theoretical Explanation of the Effect of a Decrease in the Si(111) Plasmon Energy during the Implantation of Ions with a Large Dose

    А.С. Рысбаев, J. B. Khujaniyozov, M.T. Normuradov +3

    MaqolaIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20203 iqtibos
    ABI

  9. Influence of structural defects in silicon on formation of photosensitive heterostructures Mn4Si7-Si-Mn4Si7 and Mn4Si7-Si-M

    T. S. Kamilov, А.С. Рысбаев, V. V. Klechkovskaya +3

    MaqolaOchiq kirishSemiconductor materials and interfacesEurasian journal of physics and functional materials20183 iqtibos
    ABI

  10. Change of electrophysical properties of the Si(111) and Si(100) surface in the process of ion implantation and next annealing

    А.С. Рысбаев, I. R. Bekpulatov, Б.Д. Игамов +1

    MaqolaOchiq kirishSemiconductor materials and interfacesEurasian journal of physics and functional materials20192 iqtibos
    ABI

  11. Thin silicide films: producing and properties

    А.С. Рысбаев, S. S. Nasriddinov, Yu. Yu. Yuldashev +4

    MaqolaSemiconductor materials and interfaces20042 iqtibos
    ABI

  12. Development of thermal sensors by implantation ions P+ and B+ in different sides of Si(111)

    I. R. Bekpulatov, А.С. Рысбаев, Sh.Kh. Dzhuraev +1

    MaqolaOchiq kirishSilicon and Solar Cell TechnologiesEurasian journal of physics and functional materials20181 iqtibos
    ABI

  13. High-Sensitivity Temperature Sensor on the Basis of Single-Crystal Si(111) Implanted from Multiple Directions with P+ and B+ Ions

    А.С. Рысбаев, M. T. Normurodov, A.M. Rakhimov +2

    MaqolaIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20201 iqtibos
    ABI

  14. On the Formation of Silicide Films of Metals (Li, Cs, Rb, and Ba) During Ion Implantation in Si and Subsequent Thermal Annealing

    А.С. Рысбаев, M. T. Normurodov, J. B. Khujaniyozov +2

    MaqolaSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20211 iqtibos
    ABI

  15. The modification of structure and properties of semiconductors surface by active metals ions implantation

    А.С. Рысбаев, M.T. Normuradov, Б. Е. Умирзаков

    MaqolaIon-surface interactions and analysis19990 iqtibos
    ABI

  16. About silicide production in silicon during implantation of barium and alkali ions

    А.С. Рысбаев, M.T. Normuradov, S. S. Nasriddinov

    MaqolaSemiconductor materials and interfaces19990 iqtibos
    ABI

  17. Low energy electron and photoelectron spectroscopy of Si(111) surface implanted by P + and B + ions

    А.С. Рысбаев, A. K. Tashatov

    MaqolaElectron and X-Ray Spectroscopy Techniques19990 iqtibos
    ABI

  18. Thermo-sensitive structures formed in silicon by ion implantation

    А.С. Рысбаев, M.T. Normuradov, I.P. Parmankulov +1

    MaqolaSilicon and Solar Cell Technologies19990 iqtibos
    ABI

  19. Modification of structure and properties of semiconductor surface by ion implantation with active metals

    А.С. Рысбаев, Sh.H. Djuraev, A.M. Rahimov +2

    MaqolaMetal and Thin Film MechanicsUzbekiston Fizika Zhurnali20000 iqtibos
    ABI

  20. Optimal technological modes of ion implantation and following annealing for forming thin nanosized films of silicides

    А.С. Рысбаев, S.U. Irgashev, A.S. Kasimov +3

    MaqolaOchiq kirishSemiconductor materials and interfacesEurasian journal of physics and functional materials20200 iqtibos
    ABI

  21. Comprehensive structural, morphological, chemical, and vibrational characterization of VSi₂ intermetallic alloy synthesized by spark plasma sintering

    А.С. Рысбаев, B.D. Igamov, H.M. Eshquvvatov +7

    Maqola20260 iqtibos
    ABI