A.S. Kasimov

2 ta ish

Termiz Davlat Universiteti

1. Optimal technological modes of ion implantation and following annealing for forming thin nanosized films of silicides

   А.С. Рысбаев, S.U. Irgashev, A.S. Kasimov +3

   MaqolaOAOchiq kirishSemiconductor materials and interfacesEurasian journal of physics and functional materials20200 iqtibos

   ABIABI:AkademIndex/2020.article.001584

2. Study of the effect of thermal treatment OF Mn4Si7 and CoSi2 thin films using an infrared lamp in a high-temperature furnace in inert gas environments (Ar, Kr, Xe) On their crystal structure

   B.D. Igamov, A.I. Kamardin, I.R. Bekpulatov +5

   MaqolaSemiconductor materials and interfacesSolid State Sciences20260 iqtibos

   ABIABI:AkademIndex/2026.article.018655