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Xizmatlar

T. S. Kamilov

28 ta ish

Islom Karimov nomidagi Toshkent davlat texnika universiteti

AkademScholarda batafsil koʻrsatkichlar

  1. Formation of n-type CoSi monosilicide film which can be used in instrumentation

    I. R. Bekpulatov, Gunel Imanova, T. S. Kamilov +2

    MaqolaSemiconductor materials and interfacesInternational Journal of Modern Physics B202222 iqtibos
    ABI

  2. The Influence of Structural Defects in Silicon on the Formation of Photosensitive Mn4Si7–Si❬Mn❭–Mn4Si7 and Mn4Si7–Si❬Mn❭–M Heterostructures

    T. S. Kamilov, А.С. Рысбаев, V. V. Klechkovskaya +3

    MaqolaSemiconductor materials and interfacesApplied Solar Energy201921 iqtibos
    ABI

  3. Photoelectric properties of higher manganese silicide (HMS)-SilangleMnrangle-M structures

    T. S. Kamilov, V. P. Chirva, D.K. Kabilov

    MaqolaOchiq kirishSemiconductor materials and interfacesSemiconductor Science and Technology199911 iqtibos
    ABI

  4. Study of the physical nature of Mn4Si7 crystals formed by the diffusion method using an X-ray diffraction

    Б.Д. Игамов, A.I. Kamardin, D.Kh. Nabiev +5

    MaqolaX-ray Diffraction in CrystallographyJournal of Crystal Growth20249 iqtibos
    ABI

  5. Electron microscopy characterization of higher manganese silicide film structure on silicon

    Andrey Orekhov, T. S. Kamilov, Anton S. Orekhov +3

    MaqolaSemiconductor materials and interfacesNanotechnologies in Russia20167 iqtibos
    ABI

  6. Structure of thermoelectric films of higher manganese silicide on silicon according to electron microscopy data

    Andrey Orekhov, T. S. Kamilov, B.V. Ibragimova +2

    MaqolaSemiconductor materials and interfacesSemiconductors20175 iqtibos
    ABI

  7. Mn4Si7-Si〈Mn〉-Mn4Si7 and Mn4Si7-Si〈Mn〉-M photodiodes

    Д. М. Шукурова, Andrey Orekhov, B. Z. Sharipov +2

    MaqolaSemiconductor materials and interfacesTechnical Physics20114 iqtibos
    ABI

  8. Influence of structural defects in silicon on formation of photosensitive heterostructures Mn4Si7-Si-Mn4Si7 and Mn4Si7-Si-M

    T. S. Kamilov, А.С. Рысбаев, V. V. Klechkovskaya +3

    MaqolaOchiq kirishSemiconductor materials and interfacesEurasian journal of physics and functional materials20183 iqtibos
    ABI

  9. About the mechanism of formation and growth of the higher manganese silicide films on silicon

    T. S. Kamilov, D.K. Kabilov, I.S. Samiev +6

    MaqolaSemiconductor materials and interfaces20053 iqtibos
    ABI

  10. Role of the silicon dioxide in formation of higher manganese silicide films

    T. S. Kamilov, A.A. Uzokov, D.K. Kabilov +3

    MaqolaAdvanced Thermoelectric Materials and Devices20042 iqtibos
    ABI

  11. Photoconduction amplification and quenching in the Mn4Si7-Si〈Mn〉-Mn4Si7 and Mn4Si7-Si〈Mn〉-M heterostructures

    T. S. Kamilov, I. V. Ernst, A. Yu. Samunin

    MaqolaSemiconductor materials and interfacesTechnical Physics20142 iqtibos
    ABI

  12. Formation of higher manganese silicide films on silicon

    T. S. Kamilov, D.K. Kabilov, I.S. Samiev +3

    MaqolaSemiconductor materials and interfacesTechnical Physics20052 iqtibos
    ABI

  13. On the growth of higher manganese silicide films on silicon

    Andrey Orekhov, T. S. Kamilov, Abdumalik Gaibov +2

    MaqolaSemiconductor materials and interfacesTechnical Physics20102 iqtibos
    ABI

  14. Analysis of the induced photothermal conduction in the Mn4Si7-Si〈Mn〉-Mn4Si7 and Mn4Si7-Si〈Mn〉-M heterojunctions

    T. S. Kamilov, V. V. Klechkovskaya, B. Z. Sharipov +1

    MaqolaSemiconductor materials and interfacesTechnical Physics20132 iqtibos
    ABI

  15. Nonselective polycrystalline radiation detectors based on higher manganese silicides

    T. S. Kamilov, A. Zh. Khusanov, М. К. Бахадырханов +1

    MaqolaSemiconductor materials and interfacesTechnical Physics Letters20021 iqtibos
    ABI

  16. Development of thermoelectric detectors on the basis of higher manganese silicide (HMS) films

    T. S. Kamilov, A.A. Uzokov, D.K. Kabilov +5

    MaqolaAdvanced Thermoelectric Materials and Devices20041 iqtibos
    ABI

  17. The thermoelectric radiation detector based on the multielement structures of the higher manganese silicide films

    T. S. Kamilov, D.K. Kabilov, I.S. Samiev +2

    MaqolaSemiconductor materials and interfaces20051 iqtibos
    ABI

  18. Investigation of current instabilities in Mn4Si7–Si:Mn–Mn4Si7 and Mn4Si7–Si:Mn–M heterojunctions

    T. S. Kamilov, L. L. Aksenova, B. Z. Sharipov +1

    MaqolaSemiconductor materials and interfacesSemiconductors20151 iqtibos
    ABI

  19. Growth technique and structural properties of the higher manganese silicide films

    T. S. Kamilov, D.K. Kabilov, I.S. Samiev +3

    MaqolaSemiconductor materials and interfaces20051 iqtibos
    ABI

  20. Photocurrent saturation and negative differential photoconductivity in Mn4Si7-Si〈Mn〉-Mn4Si7 and Mn4Si7-Si〈Mn〉-M heterojunctions

    T. S. Kamilov, V. V. Klechkovskaya, B. Z. Sharipov +1

    MaqolaSemiconductor materials and interfacesTechnical Physics20131 iqtibos
    ABI

  21. Investigation of the Magnesium Silicide -- Mg<sub>2</sub>Si Films

    T. S. Kamilov, D.K. Kabilov, R.Kh. Kamilova +4

    MaqolaOchiq kirishSemiconductor materials and interfaces20060 iqtibos
    ABI

  22. About the Interface Between the Higher Manganese Silicide Film and Si (111)

    T. S. Kamilov, D.K. Kabilov, S.Kh. Babadjanov +5

    MaqolaSemiconductor materials and interfaces20060 iqtibos
    ABI

  23. Overgrowth of the Mn4Si7 phase on/around the hexagonal SiC and cubic MnSi impurity phases in the Mn4Si7/Si films

    Andrey Orekhov, T. S. Kamilov, Elena I. Suvorova

    BobSemiconductor materials and interfaces20080 iqtibos
    ABI

  24. Development the obtaining technology of highest manganese silicide films for thermoelectric microelectric devices

    B. Z. Sharipov, Д. М. Шукурова, M.E. Azimov +3

    MaqolaSemiconductor materials and interfaces20100 iqtibos
    ABI

  25. Study of peculiarities of heat generation at the Mn 4 Si 7 -Si heterostructure interface

    D.M. Shukurova, T. S. Kamilov, B. Z. Sharipov +2

    MaqolaSemiconductor materials and interfacesUzbekiston Fizika Zhurnali20100 iqtibos
    ABI