Nonselective polycrystalline radiation detectors based on higher manganese silicides
T. S. KamilovKokand State Pedagogical Institute, Kokand, UzbekistanA. Zh. KhusanovTashkent State Aviation Institute, Tashkent, UzbekistanМ. К. БахадырхановTashkent State Polytechnical University, Tashkent, UzbekistanD. K. KobilovTashkent State Polytechnical University, Tashkent, Uzbekistan
Ochiq kirish: yoʻq
ABI
Annotatsiya
The films of higher manganese silicides (HMSs) obtained by the oblique deposition of manganese vapor onto silicon substrates possess a preferred texture and exhibit anisotropic thermo emf. The main parameters of IR detectors based on these HMS films have been studied. It is shown that the detectors with ∼5-μm-thick HMS films possess an electric resistance of ∼200 Ω and are capable of monitoring time variations of the incident radiation with a characteristic response time of ≤10−6s and a transformation coefficient of 500 μ V/W.
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