Asosiy kontentga oʻtish
AkademIndex

Xizmatlar

Andrey Orekhov

15 ta ish

Laboratory No. 2 of the USSR Academy of Sciences

AkademScholarda batafsil koʻrsatkichlar

  1. The Influence of Structural Defects in Silicon on the Formation of Photosensitive Mn4Si7–Si❬Mn❭–Mn4Si7 and Mn4Si7–Si❬Mn❭–M Heterostructures

    T. S. Kamilov, А.С. Рысбаев, V. V. Klechkovskaya +3

    MaqolaSemiconductor materials and interfacesApplied Solar Energy201921 iqtibos
    ABI

  2. Electron microscopy characterization of higher manganese silicide film structure on silicon

    Andrey Orekhov, T. S. Kamilov, Anton S. Orekhov +3

    MaqolaSemiconductor materials and interfacesNanotechnologies in Russia20167 iqtibos
    ABI

  3. Structure of thermoelectric films of higher manganese silicide on silicon according to electron microscopy data

    Andrey Orekhov, T. S. Kamilov, B.V. Ibragimova +2

    MaqolaSemiconductor materials and interfacesSemiconductors20175 iqtibos
    ABI

  4. Mn4Si7-Si〈Mn〉-Mn4Si7 and Mn4Si7-Si〈Mn〉-M photodiodes

    Д. М. Шукурова, Andrey Orekhov, B. Z. Sharipov +2

    MaqolaSemiconductor materials and interfacesTechnical Physics20114 iqtibos
    ABI

  5. On the Structure and Thermoelectric Properties of CoSi Obtained from a Supersaturated Solution–Melt in Sn

    F. Yu. Solomkin, Andrey Orekhov, S. V. Novikov +7

    Maqola20193 iqtibos
    ABI

  6. Influence of structural defects in silicon on formation of photosensitive heterostructures Mn4Si7-Si-Mn4Si7 and Mn4Si7-Si-M

    T. S. Kamilov, А.С. Рысбаев, V. V. Klechkovskaya +3

    MaqolaOchiq kirishSemiconductor materials and interfacesEurasian journal of physics and functional materials20183 iqtibos
    ABI

  7. About the mechanism of formation and growth of the higher manganese silicide films on silicon

    T. S. Kamilov, D.K. Kabilov, I.S. Samiev +6

    MaqolaSemiconductor materials and interfaces20053 iqtibos
    ABI

  8. On the growth of higher manganese silicide films on silicon

    Andrey Orekhov, T. S. Kamilov, Abdumalik Gaibov +2

    MaqolaSemiconductor materials and interfacesTechnical Physics20102 iqtibos
    ABI

  9. The dependence of the microstructure and thermoelectric properties of germanium-doped higher manganese silicide crystals

    Andrey Orekhov, V. V. Klechkovskaya, E. V. Rakova +4

    Maqola20172 iqtibos
    ABI

  10. Investigation of the Magnesium Silicide -- Mg<sub>2</sub>Si Films

    T. S. Kamilov, D.K. Kabilov, R.Kh. Kamilova +4

    MaqolaOchiq kirishSemiconductor materials and interfaces20060 iqtibos
    ABI

  11. About the Interface Between the Higher Manganese Silicide Film and Si (111)

    T. S. Kamilov, D.K. Kabilov, S.Kh. Babadjanov +5

    MaqolaSemiconductor materials and interfaces20060 iqtibos
    ABI

  12. Overgrowth of the Mn4Si7 phase on/around the hexagonal SiC and cubic MnSi impurity phases in the Mn4Si7/Si films

    Andrey Orekhov, T. S. Kamilov, Elena I. Suvorova

    BobSemiconductor materials and interfaces20080 iqtibos
    ABI

  13. Development the obtaining technology of highest manganese silicide films for thermoelectric microelectric devices

    B. Z. Sharipov, Д. М. Шукурова, M.E. Azimov +3

    MaqolaSemiconductor materials and interfaces20100 iqtibos
    ABI

  14. The mechanism of photocurrent saturation and appearance of negative differential photoconductivity in heterostructures Mn 4 Si 7 -Si 4 Si 7 and Mn 4 Si 7 -Si<Mn≥-M

    T. S. Kamilov, B. Z. Sharipov, V. V. Klechkovskaya +1

    MaqolaSemiconductor materials and interfacesUzbekiston Fizika Zhurnali20110 iqtibos
    ABI

  15. Selecting a Target for Obtaining Films of Higher Manganese Silicide Using Magnetron Sputtering

    М. S. Lukasov, Н. А. Архарова, Andrey Orekhov +2

    MaqolaSemiconductor materials and interfacesCrystallography Reports20240 iqtibos
    ABI