Д. М. Шукурова

6 ta ish

Islom Karimov nomidagi Toshkent davlat texnika universiteti

1. Obtaining higher manganese silicide films with high thermoelectric properties

   I. R. Bekpulatov, D.S. Shomukhammedova, Д. М. Шукурова +1

   MaqolaOAOchiq kirishSemiconductor materials and interfacesE3S Web of Conferences20239 iqtibos

   ABIABI:AkademIndex/2026.other.253378

2. Mn4Si7-Si〈Mn〉-Mn4Si7 and Mn4Si7-Si〈Mn〉-M photodiodes

   Д. М. Шукурова, Andrey Orekhov, B. Z. Sharipov +2

   MaqolaSemiconductor materials and interfacesTechnical Physics20114 iqtibos

   ABIABI:AkademIndex/2011.article.000139

3. Development the obtaining technology of highest manganese silicide films for thermoelectric microelectric devices

   B. Z. Sharipov, Д. М. Шукурова, M.E. Azimov +3

   MaqolaSemiconductor materials and interfaces20100 iqtibos

   ABIABI:AkademIndex/2010.article.000564

4. Method of Increasing Photosensitivity of Silicon Power Planes for Solar Energy

   Sh. I. Askarov, B. Z. Sharipov, Sh. K. Saliyeva +1

   MaqolaSolid-state spectroscopy and crystallographyApplied Solar Energy20180 iqtibos

   ABIABI:AkademIndex/2018.article.000969

5. Quasi-molecules of Sulphur in Silicon

   Shoikrom I. Askarov, Bashirulla B. Sharipov, Abdulaziz Sh. Mavlyanov +3

   MaqolaSemiconductor materials and interfaces20230 iqtibos

   ABIABI:AkademIndex/2023.article.012157

6. Photovoltaic Cells Based on Silicon with Binary Compounds GexSi1–x

   Н. Ф. Зикриллаев, Kh. F. Zikrillaev, F. E. Urakova +4

   MaqolaSilicon and Solar Cell TechnologiesSurface Engineering and Applied Electrochemistry20250 iqtibos

   ABIABI:AkademIndex/2025.article.005819