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AkademIndex

Xizmatlar

I. R. Bekpulatov

48 ta ish

Qarshi Davlat Universiteti

AkademScholarda batafsil koʻrsatkichlar

  1. Formation of n-type CoSi monosilicide film which can be used in instrumentation

    I. R. Bekpulatov, Gunel Imanova, T. S. Kamilov +2

    MaqolaSemiconductor materials and interfacesInternational Journal of Modern Physics B202222 iqtibos
    ABI

  2. The Influence of Structural Defects in Silicon on the Formation of Photosensitive Mn4Si7–Si❬Mn❭–Mn4Si7 and Mn4Si7–Si❬Mn❭–M Heterostructures

    T. S. Kamilov, А.С. Рысбаев, V. V. Klechkovskaya +3

    MaqolaSemiconductor materials and interfacesApplied Solar Energy201921 iqtibos
    ABI

  3. Formation and Electronic Structure of Barium-Monosilicide- and Barium-Disilicide Films

    M. T. Normurodov, А.С. Рысбаев, I. R. Bekpulatov +2

    MaqolaSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques202117 iqtibos
    ABI

  4. Obtaining of thin films of manganese silicides on a Si surface by the method of solid-phase deposition and investigation of their electronic structure

    Б. Е. Умирзаков, Gunel Imanova, I. R. Bekpulatov +1

    MaqolaSemiconductor materials and interfacesModern Physics Letters B202317 iqtibos
    ABI

  5. Formation of nanosize silicides films on the Si(111) and Si(100) surfaces by low-energy ion implantation

    А.С. Рысбаев, Zh. B. Khuzhaniyazov, A.M. Rakhimov +1

    MaqolaSemiconductor materials and interfacesTechnical Physics201415 iqtibos
    ABI

  6. Method for additional purification of the surface of Si(111) single crystal

    A. S. Risbaev, J. B. Khujaniyazov, I. R. Bekpulatov +1

    MaqolaMaterial Properties and Failure MechanismsJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques201713 iqtibos
    ABI

  7. Effect of Deposition of Submonolayer Cs Coatings on the Density of Electronic States and Energy Band Parameters of CoSi2/Si(111)

    Б. Е. Умирзаков, I. R. Bekpulatov, I. Kh. Turapov +1

    MaqolaOchiq kirishSemiconductor materials and interfacesJournal of Nano- and Electronic Physics202213 iqtibos
    ABI

  8. Effect of thermal and laser annealing on the atom distribution profiles in Si(111) implanted with P+ and B+ ions

    А.С. Рысбаев, J. B. Khujaniyozov, I. R. Bekpulatov +2

    MaqolaIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques201712 iqtibos
    ABI

  9. Investigation of Coatings Formed by Thermal Oxidation on Monocrystalline Silicon

    Bakhrom Igamov, Gunel Imanova, A.I. Kamardin +1

    MaqolaSurface Roughness and Optical MeasurementsIntegrated ferroelectrics202412 iqtibos
    ABI

  10. Formation of thin Crsi <sub>2</sub> films by the solid-phase ion-plasma method and their thermoelectric properties

    I. R. Bekpulatov, Gunel Imanova, Б. Е. Умирзаков +5

    MaqolaAdvanced Thermoelectric Materials and DevicesMaterials Research Innovations202410 iqtibos
    ABI

  11. Study of the physical nature of Mn4Si7 crystals formed by the diffusion method using an X-ray diffraction

    Б.Д. Игамов, A.I. Kamardin, D.Kh. Nabiev +5

    MaqolaX-ray Diffraction in CrystallographyJournal of Crystal Growth20249 iqtibos
    ABI

  12. Peculiarities of the electron structure of nanosized ion-implanted layers in silicon

    А.С. Рысбаев, Zh. B. Khuzhaniyazov, M.T. Normuradov +2

    MaqolaSemiconductor materials and interfacesTechnical Physics20149 iqtibos
    ABI

  13. Obtaining higher manganese silicide films with high thermoelectric properties

    I. R. Bekpulatov, D.S. Shomukhammedova, Д. М. Шукурова +1

    MaqolaOchiq kirishSemiconductor materials and interfacesE3S Web of Conferences20239 iqtibos
    ABI

  14. Formation of Mn4Si7/Si(111), CrSi2/Si(111), and CoSi2/Si(111) Thin Film and Evaluation of Their Optically Direct and Indirect Band Gap

    K.T. Dovranov, Muradulla Normuradov, Kh.T. Davranov +1

    MaqolaOchiq kirishSemiconductor materials and interfacesUkrainian Journal of Physics20248 iqtibos
    ABI

  15. Study of the electrophysical properties of higher manganese silicide (Mn4Si7) thin films and their temperature dependence

    I. R. Bekpulatov, Gunel Imanova, D.Kh. Nabiev +4

    MaqolaSemiconductor materials and interfacesCeramics International20258 iqtibos
    ABI

  16. Formation of targets and investigation of Mn4Si7 coatings produced by magnetron sputtering

    Б.Д. Игамов, Gunel Imanova, A.I. Kamardin +1

    MaqolaOchiq kirishSemiconductor materials and interfacesBulletin of the Karaganda University Physics Series20237 iqtibos
    ABI

  17. The solid-phase ion-plasma method and thermoelectric properties of thin CrSi2 films

    I. R. Bekpulatov, Gunel Imanova, S. H. Jabarov +8

    MaqolaAdvanced Thermoelectric Materials and DevicesJournal of Materials Science Materials in Electronics20247 iqtibos
    ABI

  18. Investigation of optical and electrophysical properties of Mn4Si7 coatings of different thickness

    Б.Д. Игамов, I. R. Bekpulatov, Gunel Imanova +2

    MaqolaOchiq kirishSemiconductor materials and interfacesPhysics and Chemistry of Solid State20246 iqtibos
    ABI

  19. Study of Mn4Si7 silicide crystals obtained by hot isostatic pressing and spark plasma sintering methods in an X-ray diffractometer

    Б.Д. Игамов, A.I. Kamardin, D.Kh. Nabiev +7

    MaqolaOchiq kirishSemiconductor materials and interfacesJournal of Materials Science Materials in Engineering20254 iqtibos
    ABI

  20. Surface evaluation of carbonitride coating materials at high temperature: an investigation of oxygen adsorption on crystal surfaces by molecular dynamics simulation

    M.N. Mirzayev, Gunel Imanova, D. Neov +12

    MaqolaMetal and Thin Film MechanicsJournal of Porous Materials20244 iqtibos
    ABI

  21. Electrophysical and thermoelectric properties and crystal structure of the formed Mn4Si7 thin vacuum coatings

    Б.Д. Игамов, Gunel Imanova, Vera Loboda +3

    MaqolaOchiq kirishChalcogenide Semiconductor Thin FilmsOptical Materials X20244 iqtibos
    ABI

  22. Obtaining and studying the composition, structure and properties of nanophases and nanolayers of CoSi <sub>2</sub>

    Б. Е. Умирзаков, Zh. M. Jumayev, I. R. Bekpulatov +3

    MaqolaSemiconductor materials and interfacesMaterials Research Innovations20243 iqtibos
    ABI

  23. Influence of electron irradiation on the band gap and microhardness of TlInS <sub>2</sub> , TlInSSe and TlIn <sub>0.99</sub> Cr <sub>0.01</sub> S <sub>2</sub> single crystals

    F. K. Khallokov, Gunel Imanova, S. Kh. Umarov +4

    MaqolaSolid-state spectroscopy and crystallographyMaterials Research Innovations20243 iqtibos
    ABI

  24. Influence of preliminary ion bombardment on the formation of Co and CoSi-=SUB=-2-=/SUB=- nanofilms on Si surface during solid-phase deposition

    Turapov I. Kh., I. R. Bekpulatov, A. Q. Tashatov +1

    MaqolaOchiq kirishIon-surface interactions and analysisПисьма в журнал технической физики20223 iqtibos
    ABI

  25. Influence of implantation of O2+ ions on the composition and electronic structure of the W(111) surface

    З. А. Исаханов, Б. Е. Умирзаков, D.Kh. Nabiev +5

    MaqolaOchiq kirishTransition Metal Oxide NanomaterialsMicro and Nano Systems Letters20242 iqtibos
    ABI