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Xizmatlar

V. V. Klechkovskaya

19 ta ish

Laboratory No. 2 of the USSR Academy of Sciences

AkademScholarda batafsil koʻrsatkichlar

  1. The Influence of Structural Defects in Silicon on the Formation of Photosensitive Mn4Si7–Si❬Mn❭–Mn4Si7 and Mn4Si7–Si❬Mn❭–M Heterostructures

    T. S. Kamilov, А.С. Рысбаев, V. V. Klechkovskaya +3

    MaqolaSemiconductor materials and interfacesApplied Solar Energy201921 iqtibos
    ABI

  2. Electron microscopy characterization of higher manganese silicide film structure on silicon

    Andrey Orekhov, T. S. Kamilov, Anton S. Orekhov +3

    MaqolaSemiconductor materials and interfacesNanotechnologies in Russia20167 iqtibos
    ABI

  3. Structure of thermoelectric films of higher manganese silicide on silicon according to electron microscopy data

    Andrey Orekhov, T. S. Kamilov, B.V. Ibragimova +2

    MaqolaSemiconductor materials and interfacesSemiconductors20175 iqtibos
    ABI

  4. Mn4Si7-Si〈Mn〉-Mn4Si7 and Mn4Si7-Si〈Mn〉-M photodiodes

    Д. М. Шукурова, Andrey Orekhov, B. Z. Sharipov +2

    MaqolaSemiconductor materials and interfacesTechnical Physics20114 iqtibos
    ABI

  5. Influence of structural defects in silicon on formation of photosensitive heterostructures Mn4Si7-Si-Mn4Si7 and Mn4Si7-Si-M

    T. S. Kamilov, А.С. Рысбаев, V. V. Klechkovskaya +3

    MaqolaOchiq kirishSemiconductor materials and interfacesEurasian journal of physics and functional materials20183 iqtibos
    ABI

  6. About the mechanism of formation and growth of the higher manganese silicide films on silicon

    T. S. Kamilov, D.K. Kabilov, I.S. Samiev +6

    MaqolaSemiconductor materials and interfaces20053 iqtibos
    ABI

  7. Formation of higher manganese silicide films on silicon

    T. S. Kamilov, D.K. Kabilov, I.S. Samiev +3

    MaqolaSemiconductor materials and interfacesTechnical Physics20052 iqtibos
    ABI

  8. On the growth of higher manganese silicide films on silicon

    Andrey Orekhov, T. S. Kamilov, Abdumalik Gaibov +2

    MaqolaSemiconductor materials and interfacesTechnical Physics20102 iqtibos
    ABI

  9. Analysis of the induced photothermal conduction in the Mn4Si7-Si〈Mn〉-Mn4Si7 and Mn4Si7-Si〈Mn〉-M heterojunctions

    T. S. Kamilov, V. V. Klechkovskaya, B. Z. Sharipov +1

    MaqolaSemiconductor materials and interfacesTechnical Physics20132 iqtibos
    ABI

  10. Development of thermoelectric detectors on the basis of higher manganese silicide (HMS) films

    T. S. Kamilov, A.A. Uzokov, D.K. Kabilov +5

    MaqolaAdvanced Thermoelectric Materials and Devices20041 iqtibos
    ABI

  11. Growth technique and structural properties of the higher manganese silicide films

    T. S. Kamilov, D.K. Kabilov, I.S. Samiev +3

    MaqolaSemiconductor materials and interfaces20051 iqtibos
    ABI

  12. Photocurrent saturation and negative differential photoconductivity in Mn4Si7-Si〈Mn〉-Mn4Si7 and Mn4Si7-Si〈Mn〉-M heterojunctions

    T. S. Kamilov, V. V. Klechkovskaya, B. Z. Sharipov +1

    MaqolaSemiconductor materials and interfacesTechnical Physics20131 iqtibos
    ABI

  13. Investigation of the Magnesium Silicide -- Mg<sub>2</sub>Si Films

    T. S. Kamilov, D.K. Kabilov, R.Kh. Kamilova +4

    MaqolaOchiq kirishSemiconductor materials and interfaces20060 iqtibos
    ABI

  14. About the Interface Between the Higher Manganese Silicide Film and Si (111)

    T. S. Kamilov, D.K. Kabilov, S.Kh. Babadjanov +5

    MaqolaSemiconductor materials and interfaces20060 iqtibos
    ABI

  15. Development the obtaining technology of highest manganese silicide films for thermoelectric microelectric devices

    B. Z. Sharipov, Д. М. Шукурова, M.E. Azimov +3

    MaqolaSemiconductor materials and interfaces20100 iqtibos
    ABI

  16. Study of peculiarities of heat generation at the Mn 4 Si 7 -Si heterostructure interface

    D.M. Shukurova, T. S. Kamilov, B. Z. Sharipov +2

    MaqolaSemiconductor materials and interfacesUzbekiston Fizika Zhurnali20100 iqtibos
    ABI

  17. The mechanism of photocurrent saturation and appearance of negative differential photoconductivity in heterostructures Mn 4 Si 7 -Si 4 Si 7 and Mn 4 Si 7 -Si<Mn≥-M

    T. S. Kamilov, B. Z. Sharipov, V. V. Klechkovskaya +1

    MaqolaSemiconductor materials and interfacesUzbekiston Fizika Zhurnali20110 iqtibos
    ABI

  18. Selecting a Target for Obtaining Films of Higher Manganese Silicide Using Magnetron Sputtering

    М. S. Lukasov, Н. А. Архарова, Andrey Orekhov +2

    MaqolaSemiconductor materials and interfacesCrystallography Reports20240 iqtibos
    ABI

  19. Selecting a target for obtaining films of higher manganese silicide using magnetron sputtering

    М. S. Lukasov, Н. А. Архарова, Anton S. Orekhov +2

    MaqolaOchiq kirishSemiconductor materials and interfacesКристаллография20240 iqtibos
    ABI