I.S. Samiev

4 ta ish

Toshkent avtomobil yo'llarini loyihalash, qurish va ekspluatatsiyasi instituti

1. About the mechanism of formation and growth of the higher manganese silicide films on silicon

   T. S. Kamilov, D.K. Kabilov, I.S. Samiev +6

   MaqolaSemiconductor materials and interfaces20053 iqtibos

   ABIABI:AkademIndex/2026.other.424565

2. Formation of higher manganese silicide films on silicon

   T. S. Kamilov, D.K. Kabilov, I.S. Samiev +3

   MaqolaSemiconductor materials and interfacesTechnical Physics20052 iqtibos

   ABIABI:AkademIndex/2026.other.199248

3. The thermoelectric radiation detector based on the multielement structures of the higher manganese silicide films

   T. S. Kamilov, D.K. Kabilov, I.S. Samiev +2

   MaqolaSemiconductor materials and interfaces20051 iqtibos

   ABIABI:AkademIndex/2005.article.000252

4. Growth technique and structural properties of the higher manganese silicide films

   T. S. Kamilov, D.K. Kabilov, I.S. Samiev +3

   MaqolaSemiconductor materials and interfaces20051 iqtibos

   ABIABI:AkademIndex/2026.other.609626