Structure of thermoelectric films of higher manganese silicide on silicon according to electron microscopy data
Andrey OrekhovRussian Scientific Center “Kurchatov Institute”, Moscow, 123182, RussiaT. S. KamilovTashkent State Technical University named after Abu Raykhan Biruni, Tashkent, 100095, UzbekistanB.V. IbragimovaTashkent State Technical University named after Abu Raykhan Biruni, Tashkent, 100095, UzbekistanG. I. IvakinA.V. Shubnikov Institute of CrystallographyV. V. KlechkovskayaShubnikov Institute of Crystallography, Federal Research Center “Crystallography and Photonics”, Russian Academy of Sciences, Moscow, 119333, Russia
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Annotatsiya
The structural features of higher manganese-silicide films obtained by the diffusion doping of single-crystal silicon substrates with manganese vapor in a sealed cell and a flow-through quartz reactor with continuous pumping are comparatively analyzed. Scanning electron microscopy and high-resolution transmission electron microscopy show that a single-phase textured film of higher manganese silicide is formed in the evacuated cell. A change in the growth conditions from steady (cell) to quasi-steady-state (reactor) leads to the formation of polycrystalline islands of higher manganese silicide with nanoscale inclusions of the manganese- monosilicide phase.
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