M.T. Normuradov

14 ta ish

Qarshi Davlat Universiteti

1. Variations in the electronic structure of the silicon near-surface region during implantation of phosphorus and boron ions

   M.T. Normuradov, A. K. Tashatov, А.С. Рысбаев +4

   Maqola200711 iqtibos

   ABIABI:AkademIndex/2026.other.232437

2. Peculiarities of the electron structure of nanosized ion-implanted layers in silicon

   А.С. Рысбаев, Zh. B. Khuzhaniyazov, M.T. Normuradov +2

   MaqolaSemiconductor materials and interfacesTechnical Physics20149 iqtibos

   ABIABI:AkademIndex/2026.other.095294

3. Peculiarities of BaTiO₃ in electronic and X-Ray analysis

   M.T. Normuradov, Ш. Т. Хожиев, L.B. Akhmedova +3

   MaqolaOAOchiq kirishSolid-state spectroscopy and crystallographyE3S Web of Conferences20236 iqtibos

   ABIABI:AkademIndex/2026.other.264916

4. Preparation of Calcium Titanate Perovskite Compound, Optical and Structural Properties

   Khujamkul Davranov, M.T. Normuradov, Muzaffar Davlatov +3

   MaqolaOAOchiq kirishPerovskite Materials and ApplicationsEast European Journal of Physics20244 iqtibos

   ABIABI:AkademIndex/2024.article.000896

5. Theoretical Explanation of the Effect of a Decrease in the Si(111) Plasmon Energy during the Implantation of Ions with a Large Dose

   А.С. Рысбаев, J. B. Khujaniyozov, M.T. Normuradov +3

   MaqolaIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20203 iqtibos

   ABIABI:AkademIndex/2020.article.000353

6. Structure of МеSi Silicide Films (Me: Li, Rb, K and Cs) According to Electron Microscopy Data and the Diffraction of Slow Electrons

   M.T. Normuradov, A. S. Risbaev, J. B. Khujaniyozov +1

   MaqolaSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20202 iqtibos

   ABIABI:AkademIndex/2026.other.213643

7. The influence of laser annealing on the surface state of ion doped silicon

   I.N. Kodirov, A. K. Tashatov, Б. Е. Умирзаков +1

   MaqolaLaser Material Processing Techniques19950 iqtibos

   ABIABI:AkademIndex/1995.article.000182

8. The modification of structure and properties of semiconductors surface by active metals ions implantation

   А.С. Рысбаев, M.T. Normuradov, Б. Е. Умирзаков

   MaqolaIon-surface interactions and analysis19990 iqtibos

   ABIABI:AkademIndex/1999.article.000279

9. About silicide production in silicon during implantation of barium and alkali ions

   А.С. Рысбаев, M.T. Normuradov, S. S. Nasriddinov

   MaqolaSemiconductor materials and interfaces19990 iqtibos

   ABIABI:AkademIndex/1999.article.000300

10. Thermo-sensitive structures formed in silicon by ion implantation

    А.С. Рысбаев, M.T. Normuradov, I.P. Parmankulov +1

    MaqolaSilicon and Solar Cell Technologies19990 iqtibos

    ABIABI:AkademIndex/1999.article.000302

11. Influence of ion implantation and annealing on composition and structure of GaAs surface

    M.T. Normuradov

    MaqolaOAOchiq kirishIon-surface interactions and analysisSemiconductor Physics Quantum Electronics & Optoelectronics20020 iqtibos

    ABIABI:AkademIndex/2002.article.000329

12. Composition and electronic structure of hidden nanoscale phases and layers of BaSi-=SUB=-2-=/SUB=- formed in the near-surface of Si

    Б. Е. Умирзаков, M.T. Normuradov, D. A. Normurodov +1

    MaqolaOAOchiq kirishSemiconductor materials and interfacesФизика и техника полупроводников20220 iqtibos

    ABIABI:AkademIndex/2022.article.010500

13. Formation of CrSi2 film and measurement of optical band gap energy

    K.T. Dovranov, Gunel Imanova, Vera Loboda +2

    MaqolaOAOchiq kirish20240 iqtibos

    ABIABI:AkademIndex/2024.article.016426

14. Resistive Switching Behavior of Si/TiO Thin Films for Non-Volatile Memory Applications

    M.T. Normuradov, O Ochilov, Ozodbek Y. Yuldashev +2

    MaqolaOAOchiq kirish20260 iqtibos

    ABIABI:AkademIndex/2026.article.043944