Maqola

Resistive Switching Behavior of Si/TiO Thin Films for Non-Volatile Memory Applications

M.T. NormuradovKarshi State University, UzbekistanO OchilovCenter of Nanotechnology Development, National University of Uzbekistan, Tashkent, UzbekistanOzodbek Y. YuldashevCenter of Nanotechnology Development, National University of Uzbekistan, Tashkent, UzbekistanZarnigor A. KarshievaCenter of Nanotechnology Development, National University of Uzbekistan, Tashkent, UzbekistanNurbek U. ToshboyevCenter of Nanotechnology Development, National University of Uzbekistan, Tashkent, Uzbekistan

2026

Ochiq kirishOlmos

Litsenziya: cc-by

ABI

Annotatsiya

This study presents the fabrication of Si/TiO thin films deposited in DC mode via magnetron sputtering onto p-type silicon substrates and investigates their temperature-dependent resistive switching (RS) and low-resistance state (LRS) characteristics. The nanostructures were annealed at 420°C to improve crystallinity and interfacial contact. Electrical characterization through I–V measurements revealed clear bipolar RS behavior without the need for an initial forming process. The devices exhibited stable high-resistance (HRS) and low-resistance (LRS) states over multiple cycles. The switching mechanism is explained by the formation and rupture of conductive filaments induced by oxygen vacancies at the Si/TiO interface. Bandgap values obtained from Tauc plots were approximately 3.24 eV for TiO and 3.41 eV for SnO₂. These results confirm that Si/TiO nanothin films are promising materials for next-generation fast, energy-efficient, and rewritable memory devices.

Hali tarjima qilinmagan

Identifikatorlar

DOI: 10.26565/2312-4334-2026-2-29

Iqtiboslar va manbalar

0 ta iqtibos22 ta foydalanilgan manba