Zh. B. Khuzhaniyazov

3 ta ish

Islom Karimov nomidagi Toshkent davlat texnika universiteti

1. Formation of nanosize silicides films on the Si(111) and Si(100) surfaces by low-energy ion implantation

   А.С. Рысбаев, Zh. B. Khuzhaniyazov, A.M. Rakhimov +1

   MaqolaSemiconductor materials and interfacesTechnical Physics201415 iqtibos

   ABIABI:AkademIndex/2026.other.213638

2. On new two-dimensional structures produced on the Si (111) and Si (100) surface upon molecular-beam epitaxy of cobalt and silicon

   А.С. Рысбаев, A. K. Tashatov, Sh. X. Dzhuraev +3

   MaqolaSurface and Thin Film PhenomenaJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques201113 iqtibos

   ABIABI:AkademIndex/2011.article.000167

3. Peculiarities of the electron structure of nanosized ion-implanted layers in silicon

   А.С. Рысбаев, Zh. B. Khuzhaniyazov, M.T. Normuradov +2

   MaqolaSemiconductor materials and interfacesTechnical Physics20149 iqtibos

   ABIABI:AkademIndex/2026.other.095294