J. B. Khujaniyazov

2 ta ish

Islom Karimov nomidagi Toshkent davlat texnika universiteti

1. Method for additional purification of the surface of Si(111) single crystal

   A. S. Risbaev, J. B. Khujaniyazov, I. R. Bekpulatov +1

   MaqolaMaterial Properties and Failure MechanismsJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques201713 iqtibos

   ABIABI:AkademIndex/2017.article.000098

2. Optimal technological modes of ion implantation and following annealing for forming thin nanosized films of silicides

   А.С. Рысбаев, S.U. Irgashev, A.S. Kasimov +3

   MaqolaOAOchiq kirishSemiconductor materials and interfacesEurasian journal of physics and functional materials20200 iqtibos

   ABIABI:AkademIndex/2020.article.001584