I. Kh. Turapov

5 ta ish

Islom Karimov nomidagi Toshkent davlat texnika universiteti

1. Formation of n-type CoSi monosilicide film which can be used in instrumentation

   I. R. Bekpulatov, Gunel Imanova, T. S. Kamilov +2

   MaqolaSemiconductor materials and interfacesInternational Journal of Modern Physics B202222 iqtibos

   ABIABI:AkademIndex/2022.article.000132

2. Obtaining of thin films of manganese silicides on a Si surface by the method of solid-phase deposition and investigation of their electronic structure

   Б. Е. Умирзаков, Gunel Imanova, I. R. Bekpulatov +1

   MaqolaSemiconductor materials and interfacesModern Physics Letters B202317 iqtibos

   ABIABI:AkademIndex/2023.article.000250

3. Effect of Deposition of Submonolayer Cs Coatings on the Density of Electronic States and Energy Band Parameters of CoSi2/Si(111)

   Б. Е. Умирзаков, I. R. Bekpulatov, I. Kh. Turapov +1

   MaqolaOAOchiq kirishSemiconductor materials and interfacesJournal of Nano- and Electronic Physics202213 iqtibos

   ABIABI:AkademIndex/2026.other.095303

4. Obtaining and studying the composition, structure and properties of nanophases and nanolayers of CoSi ₂

   Б. Е. Умирзаков, Zh. M. Jumayev, I. R. Bekpulatov +3

   MaqolaSemiconductor materials and interfacesMaterials Research Innovations20243 iqtibos

   ABIABI:AkademIndex/2026.other.267076

5. Study of the dependence of the degree of disordering of the surface layers of Si(111) and Ge(111) single crystals upon bombardment with low-energy ions

   Б. Е. Умирзаков, I. R. Bekpulatov, Gunel Imanova +2

   MaqolaOAOchiq kirishIon-surface interactions and analysisEurasian journal of physics and functional materials20232 iqtibos

   ABIABI:AkademIndex/2026.other.267071