Journal of Crystal Growth

6 ta ish

Jurnal · ISSN 0022-0248

1. Study of the physical nature of Mn4Si7 crystals formed by the diffusion method using an X-ray diffraction

   Б.Д. Игамов, A.I. Kamardin, D.Kh. Nabiev +5

   MaqolaX-ray Diffraction in CrystallographyJournal of Crystal Growth20249 iqtibos

   ABIABI:AkademIndex/2024.article.000891

2. Studies of the crystal structure of solid solutions (Sn2)1−x−y(GaAs)x(ZnSe)y, (GaAs)1−x(ZnSe)x grown from liquid phase

   A. Sh. Razzokov, A.S. Saidov, B. Allabergenov +3

   MaqolaChalcogenide Semiconductor Thin FilmsJournal of Crystal Growth20234 iqtibos

   ABIABI:AkademIndex/2023.article.002347

3. Effect of alloy composition on defect formation in GexSi1−x/Si heterostructures obtained by molecular beam epitaxy

   V. I. Vdovin, M. G. Mil’vidskiĭ, T. G. Yugova +2

   MaqolaSemiconductor materials and interfacesJournal of Crystal Growth19940 iqtibos

   ABIABI:AkademIndex/1994.article.000037

4. Persistent photoconductivity phenomena in GaMnAs grown via molecular beam epitaxy

   P. B. Parchinskiy, Fu Yu, Yousuk Cho +1

   MaqolaSemiconductor Quantum Structures and DevicesJournal of Crystal Growth20080 iqtibos

   ABIABI:AkademIndex/2008.article.000327

5. A new method for growing epitaxial films on foreign substrates − Bent epitaxy

   D. V. Saparov

   MaqolaZnO doping and propertiesJournal of Crystal Growth20240 iqtibos

   ABIABI:AkademIndex/2024.article.008412

6. Growth and structural study of the solid solution Si1−xGex (0 < x < 1)

   Alijon Shonazarovich RAZZOKOV, Serhii Ivanovych Petrushenko, Mateusz Fijalkowski +2

   MaqolaOAOchiq kirishSilicon Nanostructures and PhotoluminescenceJournal of Crystal Growth20260 iqtibos

   ABIABI:AkademIndex/2026.article.006586