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Xizmatlar

D. V. Saparov

26 ta ish

Oʻzbekiston Respublikasi Fanlar Akademiyasi

AkademScholarda batafsil koʻrsatkichlar

  1. Investigation of the Crystallographic Perfection and Photoluminescence Spectrum of the Epitaxial Films of (Si2)1-x(GaP)x<a:math xmlns:a="http://www.w3.org/1998/Math/MathML" id="M1"> <a:mfenced open="(" close=")" separators="|"> <a:mrow> <a:mn>0</a:mn> <a:mo>≤</a:mo> <a:mi>x</a:mi> <a:mo>≤</a:mo> <a:mn>1</a:mn> </a:mrow> </a:mfenced> </a:math> Solid Solution, Grown on Si and GaP Substrates with the Crystallographic Orientation (111)

    A.S. Saidov, D. V. Saparov, Sh. N. Usmonov +5

    MaqolaOchiq kirishSemiconductor Quantum Structures and DevicesAdvances in Condensed Matter Physics202113 iqtibos
    ABI

  2. Structural Studies of the Epitaxial Layer of a Substitutional Solid Solution (GaAs)<sub>1−<i>x</i></sub>(ZnSe)<sub><i>x</i></sub> with Nanocrystals

    A.S. Saidov, Sh. N. Usmonov, D. V. Saparov

    MaqolaOchiq kirishQuantum Dots Synthesis And PropertiesAdvances in Materials Science and Engineering20198 iqtibos
    ABI

  3. Possibility of obtaining the (GaSb)1 − x (Si2) x films on silicon substrates by the method of liquid-phase epitaxy

    Sh. N. Usmonov, A.S. Saidov, A. Yu. Leyderman +2

    MaqolaSemiconductor materials and interfacesSemiconductors20098 iqtibos
    ABI

  4. Features of liquid-phase epitaxy of new solid solutions of (GaAs)1−y−z(Ge<sub>2</sub>)y(ZnSe)z and their photoelectric properties

    A.S. Saidov, D. V. Saparov, Sh. N. Usmonov +2

    MaqolaChalcogenide Semiconductor Thin FilmsInternational Journal of Modern Physics B20227 iqtibos
    ABI

  5. Thermally Stimulated Transformation of Oxygen Atoms Between Phase States in a Silicon Single Crystal

    M. U. Kalanov, I. I. Sadikov, A. V. Khugaev +4

    MaqolaOchiq kirishSilicon Nanostructures and PhotoluminescenceSilicon20243 iqtibos
    ABI

  6. Synthesis and characterization of (Si2)1−x−y (Ge2) x (GaAs) y continuous solid solutions

    A.S. Saidov, Sh. N. Usmonov, Khomidkhodzha Kholikov +1

    MaqolaSemiconductor materials and interfacesTechnical Physics Letters20073 iqtibos
    ABI

  7. Spectral sensitivity of (Si2)1 − x (CdS)x solid solutions

    A.S. Saidov, Sh. N. Usmonov, Khomidkhodzha Kholikov +1

    MaqolaSemiconductor materials and interfacesTechnical Physics Letters20073 iqtibos
    ABI

  8. Growing the solid solution of molekular substitution (GaAs)<sub>1-z</sub>(ZnSe)<sub>z</sub>

    A.S. Saidov, D. V. Saparov, Shukrullo Usmonov +2

    MaqolaOchiq kirishChalcogenide Semiconductor Thin FilmsIOP Conference Series Materials Science and Engineering20212 iqtibos
    ABI

  9. Radiation-Stimulated Transformation of Cxygen Atoms Between Impurity Phase States of A Growing Silicon Single Crystal

    M. U. Kalanov, I. I. Sadikov, Sh. R. Malikov +5

    MaqolaSilicon and Solar Cell TechnologiesSilicon20252 iqtibos
    ABI

  10. Liquid phase epitaxy of (Sn2)1−x(InSb)x solid solution layers

    A.S. Saidov, A. Sh. Razzakov, D. V. Saparov

    MaqolaSemiconductor materials and interfacesTechnical Physics Letters20022 iqtibos
    ABI

  11. Effect of Diatomic Silicon Molecular Impurities on the Luminescent Properties of Semiconductor Solid Solutions

    A.S. Saidov, Sh. N. Usmonov, D. V. Saparov +1

    MaqolaSilicon Nanostructures and PhotoluminescenceApplied Solar Energy20202 iqtibos
    ABI

  12. Current-voltage characteristic of n-p-p + structures based on a chromium-compensated silicon-germanium solid solution

    A.S. Saidov, A. Yu. Leĭderman, Б. Сапаев +2

    Maqola19962 iqtibos
    ABI

  13. Processes of Current Transport in p-Si-n-(Si&lt;sub&gt;2&lt;/sub&gt;)&lt;sub&gt;1−&lt;/sub&gt;&lt;i&gt;&lt;sub&gt;y&lt;/sub&gt;&lt;/i&gt;&lt;sub&gt;−&lt;/sub&gt;&lt;i&gt;&lt;sub&gt;z&lt;/sub&gt;&lt;/i&gt;(GaP)&lt;i&gt;&lt;sub&gt;y&lt;/sub&gt;&lt;/i&gt;(ZnSe)&lt;i&gt;&lt;sub&gt;z&lt;/sub&gt;&lt;/i&gt; Heterostructure Produced by Liquid Phase Epitaxy

    A.S. Saidov, A. Yu. Leyderman, Sh. N. Usmonov +4

    MaqolaOchiq kirishSemiconductor materials and interfacese-Journal of Surface Science and Nanotechnology20221 iqtibos
    ABI

  14. Growth and photosensitivity of pSi-n(GaSb)1 − x (Si2) x structures

    A.S. Saidov, М. С. Саидов, Sh. N. Usmonov +2

    MaqolaSemiconductor materials and interfacesApplied Solar Energy20071 iqtibos
    ABI

  15. Photosensitivity of pSi-n(GaSb)1 − x − y (Si2) x (GaAs) y , pSi-n(GaSb)1 − x − y (Si2) x (GaAs) y ,-n(GaSb) structures

    A.S. Saidov, М. С. Саидов, Sh. N. Usmonov +2

    MaqolaSemiconductor materials and interfacesApplied Solar Energy20081 iqtibos
    ABI

  16. Expansion of the spectral sensitivity range of the silicon photocells by growing a solid (Si2)1–x (GaP) x (0 ≤ x ≤ 1) solution

    D. V. Saparov, М. С. Саидов, A.S. Saidov

    MaqolaSemiconductor materials and interfacesApplied Solar Energy20161 iqtibos
    ABI

  17. Growth and spectral sensitivity of pSi-n(Si2)1−x (ZnSe) x structures

    A.S. Saidov, М. С. Саидов, Sh. N. Usmonov +2

    MaqolaSemiconductor materials and interfacesApplied Solar Energy20080 iqtibos
    ABI

  18. Growing of perfect single-crystal epitaxial films of (Si 2 ) 1-x (GaN) x solid solutions on Si (111) substrates from the liquid phase

    D. V. Saparov, A.S. Saidov, Sh. N. Usmonov +3

    PreprintOchiq kirishGaN-based semiconductor devices and materialsResearch Square20230 iqtibos
    ABI

  19. Thermally Stimulated Transformation of Oxygen Atoms between Phase States in a Silicon Single Crystal

    M. U. Kalanov, I. I. Sadikov, A. V. Khugaev +4

    PreprintSilicon Nanostructures and PhotoluminescenceResearch Square20230 iqtibos
    ABI

  20. Structural Features of the Epitaxial Layer of the (GaAs)&lt;sub&gt;1−&lt;/sub&gt;&lt;i&gt;&lt;sub&gt;y&lt;/sub&gt;&lt;/i&gt;&lt;sub&gt;−&lt;/sub&gt;&lt;i&gt;&lt;sub&gt;z&lt;/sub&gt;&lt;/i&gt;(Ge&lt;sub&gt;2&lt;/sub&gt;)&lt;i&gt;&lt;sub&gt;y&lt;/sub&gt;&lt;/i&gt;(ZnSe)&lt;i&gt;&lt;sub&gt;z&lt;/sub&gt;&lt;/i&gt; Solid Solution Grown from a Bismuth Solution Melt

    A.S. Saidov, M. U. Kalanov, D. V. Saparov +4

    MaqolaOchiq kirishSemiconductor materials and interfacese-Journal of Surface Science and Nanotechnology20240 iqtibos
    ABI

  21. Regarding Spectrum Photosensitivity and Certain GaAs’s Structural Properties Heterostructures, Namely (GaAs)<sub>1-x-y</sub>(Ge2)<sub>x</sub>(ZnSe)<sub>y</sub>

    Shavkat Ismailov, D. V. Saparov, A.S. Saidov +2

    MaqolaPhase-change materials and chalcogenides20240 iqtibos
    ABI

  22. A new method for growing epitaxial films on foreign substrates − Bent epitaxy

    D. V. Saparov

    MaqolaZnO doping and propertiesJournal of Crystal Growth20240 iqtibos
    ABI

  23. Some electrical properties of p-Si–n-(Si2)1-y(GaN)y structures obtained by epitaxy of (Si2)1-y(GaN)y solid solutions on silicon substrates from liquid-phase

    A.S. Saidov, Shukrullo Usmonov, D. V. Saparov +4

    MaqolaGaN-based semiconductor devices and materialsAIP conference proceedings20240 iqtibos
    ABI

  24. Growing Perfect Single-Crystal Epitaxial Films of (Si&lt;sub&gt;2&lt;/sub&gt;)&lt;sub&gt;1-x&lt;/sub&gt;(GaN)&lt;sub&gt;x&lt;/sub&gt; Solid Solutions on Si (111) Substrates from the Liquid Phase

    A.S. Saidov, Sh. N. Usmonov, M. U. Kalanov +5

    MaqolaOchiq kirishGaN-based semiconductor devices and materialsActa Physica Polonica A20250 iqtibos
    ABI

  25. Electrophysical properties of diamond films deposited on silicon substrates by hfcvd method

    A.S. Saidov, А. Кутлимратов, U. Kh. Rakhmonov +3

    MaqolaOchiq kirish20260 iqtibos
    ABI