Maqola

Some electrical properties of p-Si–n-(Si2)1-y(GaN)y structures obtained by epitaxy of (Si2)1-y(GaN)y solid solutions on silicon substrates from liquid-phase

A.S. SaidovPhysical-Technical Institute of the Academy of Sciences of the Republic of Uzbekistan, Tashkent, UzbekistanShukrullo UsmonovPhysical-Technical Institute of the Academy of Sciences of the Republic of Uzbekistan, Tashkent, UzbekistanD. V. SaparovPhysical-Technical Institute of the Academy of Sciences of the Republic of Uzbekistan, Tashkent, UzbekistanTolmas IshniyazovPhysical-Technical Institute of the Academy of Sciences of the Republic of Uzbekistan, Tashkent, UzbekistanKurban GaimnazarovGulistan State University, Sirdarya, UzbekistanS NiyazovGulistan State University, Sirdarya, UzbekistanKomil SATTARKULOVGulistan State University, Sirdarya, Uzbekistan

AIP conference proceedingsjournal2024en

Ochiq kirish: yoʻq

ABI

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Mavzular

GaN-based semiconductor devices and materials Semiconductor materials and devices Thin-Film Transistor Technologies

Identifikatorlar

DOI: 10.1063/5.0242096

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