S Niyazov

1 ta ish

Guliston universiteti

1. Some electrical properties of p-Si–n-(Si2)1-y(GaN)y structures obtained by epitaxy of (Si2)1-y(GaN)y solid solutions on silicon substrates from liquid-phase

   A.S. Saidov, Shukrullo Usmonov, D. V. Saparov +4

   MaqolaGaN-based semiconductor devices and materialsAIP conference proceedings20240 iqtibos

   ABIABI:AkademIndex/2024.article.009139